SBL3030PT_1

SBL3030PT - SBL3060PT 30A SCHOTTKY BARRIER RECTIFIER SPICE MODELS: SBL3030PT SBL3035PT SBL3040PT SBL3045PT SBL3050PT SBL3060PT Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application Lead Free Finish, RoHS Compliant (Note 3) Dim A TO-3P Min 1.88 4.87 21.25 19.60 2.10 0.51 15.75 1.93 2.90Æ 3.78 5.20 1.12 1.90 2.93 11.70 Max 2.08 5.13 21.75 20.10 2.40 0.76 16.25 2.18 3.20Æ 4.38 5.70 1.22 2.16 3.22 12.80 H A B B C D E S R P N J C K L G G H J K Mechanical Data · · · · · · · · Case: TO-3P Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Bright Tin. Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Ordering Information: See Last Page Marking: Type Number Weight: 5.6 grams (approximate) Q D L M N P Q R S E M M 4.40 Typical All Dimensions in mm @ TA = 25°C unless otherwise specified Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 95°C (Note 1) Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM CT RqJc Tj, TSTG SBL 3030PT 30 21 SBL 3035PT 35 24.5 SBL 3040PT 40 28 30 SBL 3045PT 45 31.5 SBL 3050PT 50 35 SBL 3060PT 60 42 Unit V V A A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop Peak Reverse Current at Rated DC Blocking Voltage Typical Total Capacitance Typical Thermal Resistance Junction to Case Operating and Storage Temperature Range Notes: 275 0.55 1.0 75 1100 2.0 -65 to +150 0.70 @ IF = 15A, TC = 25°C @ TC = 25°C @ TC = 100°C (Note 2) (Note 1) V mA pF °C/W °C 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS23018 Rev. 10 - 2 1 of 3 www.diodes.com SBL3030PT - SBL3060PT ã Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) 30 100 SBL3030PT - SBL30450PT I(AV), AVERAGE RECTIFIED CURRENT (A) 24 10 SBL3050PT - SBL3060PT 18 12 1.0 6 0 0 100 50 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Derating Curve 150 0.1 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Fwd Characteristics per Element IFSM, PEAK FORWARD SURGE CURRENT (A) 300 CT, JUNCTION CAPACITANCE (pF) 8.3 ms single half-sine-wave JEDEC method 4000 Tj = 25°C f = 1MHz 250 200 1000 150 100 50 100 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Forward Surge Current 0.1 1.0 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance per Element 100 IR, INSTANTANEOUS REVERSE CURRENT (A) 100 TC = 100°C 10 TC = 75°C 1.0 TC = 25°C 0.1 0.01 120 40 80 PERCENT OF PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics per Element 0 DS23018 Rev. 10 - 2 2 of 3 www.diodes.com SBL3030PT - SBL3060PT Ordering Information Device SBL3030PT SBL3035PT SBL3040PT SBL3045PT SBL3050PT SBL3060PT Notes: (Note 4) Packaging TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P Shipping 30/Tube 30/Tube 30/Tube 30/Tube 30/Tube 30/Tube 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap2008.pdf DS23018 Rev. 10 - 2 3 of 3 www.diodes.com SBL3030PT - SBL3060PT