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SBL845

SBL845

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    SBL845 - 8.0A SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated

  • 数据手册
  • 价格&库存
SBL845 数据手册
SPICE MODELS: SBL830 SBL835 SBL840 SBL845 SBL850 SBL860 SBL830 - SBL860 8.0A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · · · · · · · Schottky Barrier Chip Guard Ring for Transient Protection Low Power Loss, High Efficiency High Current Capability, Low VF High Surge Capability For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Lead Free Finish, RoHS Compliant (Note 3) K C D A B L M TO-220AC Dim A B C D E Pin 1 Pin 2 Min 14.48 10.00 2.54 5.90 2.80 12.70 0.69 3.54 4.07 1.15 0.30 2.04 4.83 Max 15.75 10.40 3.43 6.40 3.93 14.27 0.93 3.78 4.82 1.39 0.50 2.79 5.33 Mechanical Data Case: TO-220AC Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Polarity: See Diagram Terminals: Finish – Bright Tin. Solderable per MIL-STD-202, Method 208 Marking: Type Number Weight: 2.3 grams (approx.) J R P Pin 1 + Pin 2 + Case G E G N J K L M N P R All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC = 95°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Case (Note 1) Operating and Storage Temperature Range Notes: @ TA = 25°C unless otherwise specified Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM Cj RqJC Tj, TSTG SBL 830 30 21 SBL 835 35 24.5 SBL 840 40 28 8 200 0.55 0.5 50 700 6.9 SBL 845 45 31.5 SBL 850 50 35 SBL 860 60 42 Unit V V A A @ IF = 8A, TC = 25°C @ TC = 25°C @ TC = 100°C 0.70 V mA pF °C/W °C -65 to +150 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS23044 Rev. 4 - 2 1 of 3 www.diodes.com SBL830-SBL860 ã Diodes Incorporated 8 IF, INSTANTANEOUS FORWARD CURRENT (A) 10 100 I(AV), AVERAGE FORWARD CURRENT (A) SBL830 - SBL845 10 6 SBL850 - SBL860 4 1.0 2 0 0 50 100 150 TC, CASE TEMPERATURE (° C) Fig. 1 Fwd Current Derating Curve 0.1 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 300 IFSM, PEAK FORWARD SURGE CURRENT (A) 4000 8.3 ms single half-sine-wave JEDEC method Tj = 25° C 250 Cj, CAPACITANCE (pF) 200 1000 150 100 50 100 0.1 0 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 100 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance IR, INSTANTANEOUS REVERSE CURRENT (mA) 100 Tj = 100°C 10 1.0 Tj = 75°C 0.1 Tj = 25°C 0.01 0 40 80 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS23044 Rev. 4 - 2 2 of 3 www.diodes.com SBL830-SBL860 Ordering Information Device SBL8xx* (Note 4) Packaging TO-220AC Shipping 50/Tube * xx = Device type, e.g. SBL845 Notes: 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf. DS23044 Rev. 4 - 2 3 of 3 www.diodes.com SBL830-SBL860
SBL845 价格&库存

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