SBR3M30P1

SBR3M30P1

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    SBR3M30P1 - 3.0A SBR Surface Mount Super Barrier Rectifier - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
SBR3M30P1 数据手册
SBR3M30P1 3.0A SBR® Surface Mount Super Barrier Rectifier PowerDI™123 Features • • • • • • • • • • • • Ultra Low Leakage Current Excellent High Temperature Stability Superior Reverse Avalanche Capability Patented Interlocking Clip Design for High Surge Current Capacity Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability 175ºC Operating Junction Temperature ±16KV ESD Protection (HBM, 3B) ±25KV ESD Protection (IEC61000-4-2 Level 4, Air Discharge) Lead Free Finish, RoHS Compliant (Note 1) “Green” Molding Compound (No Br, Sb) Qualified to AEC-Q 101 Standards for High Reliability Mechanical Data • • • • • • • Case: PowerDI™123 Case Material: Molded Plastic, “Green” Molding compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Polarity Indicator: Cathode Band Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Maximum Ratings @ TA = 25ºC unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (See Figure 1) Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load Non-Repetitive Avalanche Energy (TJ = 25°C, IAS = 5A, L = 8.5 mH) Repetitive Peak Avalanche Energy (1µs, 25°C) Maximum Thermal Resistance Thermal Resistance Junction to Soldering (Note 2) Thermal Resistance Junction to Ambient (Note 3) Thermal Resistance Junction to Ambient (Note 4) Operating and Storage Temperature Range Notes: Symbol VRRM VRWM VRM VR(RMS) IO IFSM EAS PARM RӨJS RӨJA TJ, TSTG Value 30 21 3.0 75 105 1100 5 183 125 -65 to +175 Unit V V A A mJ W °C/W ºC 1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7. 2. Theoretical RӨJS calculated from the top center of the die straight down to the PCB cathode tab solder junction. 3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf. 4. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf __________ SBR is a registered trademark of Diodes Incorporated. PowerDI is a trademark of Diodes Incorporated. SBR3M30P1 Rev. 4 - 2 1 of 4 www.diodes.com January 2007 © Diodes Incorporated . SBR3M30P1 Electrical Characteristics @ TA = 25ºC unless otherwise specified Characteristic Reverse Breakdown Voltage (Note 5) Symbol V(BR)R Min 30 Typ 0.26 0.37 0.46 0.16 0.29 0.42 8.5 19 1.7 3.1 Max 0.30 0.41 0.50 0.19 0.32 0.45 100 200 15 20 Unit V Test Condition IR = 250 µA IF = 0.1A, TJ = 25ºC IF = 1.0A,TJ = 25ºC IF = 3.0A,TJ = 25ºC IF = 0.1A, TJ = 125ºC IF = 1.0A,TJ = 125ºC IF = 3.0A,TJ = 125ºC VR = 5V, TJ = 25 ºC VR = 30V, TJ = 25 ºC VR = 5V, TJ = 125 ºC VR = 30V, TJ = 125 ºC Forward Voltage Drop VF V Leakage Current (Note 5) IR - µA µA mA mA Notes: 5. Short duration pulse test used to minimize self-heating effect. SBR3M30P1 Rev. 4 - 2 2 of 4 www.diodes.com January 2007 © Diodes Incorporated SBR3M30P1 Package Outline Drawings PowerDI™123 PowerDI™123 Dim A B C D E H L L1 L2 L3 L4 Min 3.65 Max 3.75 Typ 3.70 2.80 2.775 2.825 1.750 1.800 1.775 0.955 1.000 0.95 0.15 0.60 — — — 0.95 1.05 0.25 0.70 — — — 1.25 0.98 1.00 0.20 0.65 1.36 1.10 0.20 1.05 All Dimensions in mm SBR3M30P1 Rev. 4 - 2 3 of 4 www.diodes.com January 2007 © Diodes Incorporated SBR3M30P1 Marking, Polarity, Weight & Ordering Information Case Style Marking Weight SBR3M30P1 3M3 Top View Back View 0.096g (approx.) Ordering Information SBR3M30P1-7 3000/Tape & Reel Date Code 3M3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) Date Code Key 2006 Year T Code Month Code Jan 1 2007 U Feb 2 Mar 3 2008 V Apr 4 May 5 2009 W Jun 6 Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. SBR3M30P1 Rev. 4 - 2 4 of 4 www.diodes.com January 2007 © Diodes Incorporated
SBR3M30P1
1. 物料型号: - SBR3M30P1

2. 器件简介: - SBR3M30P1是一款3.0A的表面贴装超级屏障整流行波管PowerDI™123。 - 特点包括超低漏电流、优秀的高温稳定性、优越的反向雪崩能力、专利互锁夹设计以提高高浪涌电流容量、专利超级屏障整流技术、软快速开关能力、175ºC工作结温、±16KV ESD保护(HBM, 3B)、±25KV ESD保护(IEC61000-4-2等级4,空气放电)、无铅表面处理,符合RoHS标准(注1)、“绿色”模塑料(无溴,锑)、符合AEC-Q101高可靠性标准。

3. 引脚分配: - 阴极带终端:亚锡镀层覆盖铜框架,可焊性符合MIL-STD-202方法208。

4. 参数特性: - 最大额定值@ TA = 25ºC,除非另有说明: - 峰值重复反向电压:30V - 工作峰值反向电压:30V - 直流阻断电压:30V - 有效值反向电压:21V - 平均整流输出电流:3.0A - 非重复峰值正向浪涌电流:75A - 非重复雪崩能量:105mJ - 重复峰值雪崩能量:1100W - 最大热阻: - 焊接(注2):5 - 环境(注3):183 - 环境(注4):125°C/W - 工作和存储温度范围:-65至+175°C

5. 功能详解: - 该器件为单相、半波、60Hz、电阻或电感负载设计。对于电容性负载,电流需降低20%。

6. 应用信息: - 该器件适用于需要高可靠性和高浪涌电流容量的应用场合。

7. 封装信息: - 封装:PowerDI™123 - 封装材料:“绿色”模塑料,UL阻燃等级94V-0 - 尺寸参数(单位:mm): - A:3.65-3.75,典型值3.70 - B:2.775-2.825,典型值2.80 - C:1.750-1.800,典型值1.775 - D:0.955-1.000,典型值0.98 - E:0.95-1.05,典型值1.00 - H:0.15-0.25,典型值0.20 - L:0.60-0.70,典型值0.65 - L1:1.36 - L2:1.10 - L3:0.20 - L4:0.95-1.25,典型值1.05
SBR3M30P1 价格&库存

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