TB3500M

TB0640M - TB3500M 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE Features UNDER DEVELOPMENT NEW PRODUCT · · · · · · 50A Peak Pulse Current @ 10/1000ms 250A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and Low On-State Voltage B A Dim A SMB Min 4.06 3.30 1.96 0.15 5.21 0.05 2.01 0.76 Max 4.57 3.94 2.21 0.31 5.59 0.20 2.62 1.52 Mechanical Data · · · · · · · · Case: SMB, Molded Plastic Plastic Material: UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208 Polarity: None; Bi-Directional Devices Have No Polarity Indicator Weight: 0.093 grams (approx.) Marking: Date Code and Marking Code (See Page 4) Ordering Information: See Page 4 C B C D D G E F G H H F E All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Non-Repetitive Peak Impulse Current Non-Repetitive Peak On-State Current Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Lead Thermal Resistance, Junction to Ambient Typical Positive Temperature Coefficient for Breakdown Voltage @10/1000us @8.3ms (one-half cycle) Symbol Ipp ITSM Tj TSTG RqJL RqJA DVBR/DTj Value 50 30 -40 to +150 -55 to +150 20 100 0.1 Unit A A °C °C °C/W °C/W %/°C Maximum Rated Surge Waveform Waveform 2/10 us 8/20 us 10/160 us 10/700 us 10/560 us 10/1000 us Standard GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T, K20/K21 FCC Part 68 GR-1089-CORE Ipp (A) 300 250 150 100 75 50 0 IPP, PEAK PULSE CURRENT (%) 100 Peak Value (Ipp) tr = rise time to peak value tp = decay time to half value Half Value 50 0 tr tp TIME DS30361 Rev. 2 - 1 1 of 4 TB0640M - TB3500M Electrical Characteristics @ TA = 25°C unless otherwise specified On-State Voltage @ IT = 1 A VT (V) 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 NEW PRODUCT Part Number Rated Repetitive Off-State Voltage VDRM (V) Off-State Leakage Current @ VDRM IDRM (uA) 5 5 5 5 5 5 5 5 5 5 5 Breakover Voltage VBO (V) 77 88 98 130 160 180 220 265 300 350 400 Breakover Current IBO Min (mA) 50 50 50 50 50 50 50 50 50 50 50 Max (mA) 800 800 800 800 800 800 800 800 800 800 800 Holding Current IH Min (mA) 150 150 150 150 150 150 150 150 150 150 150 Max (mA) 800 800 800 800 800 800 800 800 800 800 800 Off-State Capacitance CO (pF) 140 140 140 90 90 90 90 60 60 60 60 Marking Code TB0640M TB0720M TB0900M TB1100M TB1300M TB1500M TB1800M TB2300M TB2600M TB3100M TB3500M 58 65 75 90 120 140 160 190 220 275 320 T064M T072M T090M T110M T130M T150M T180M T230M T260M T310M T350M Symbol VDRM IDRM VBR IBR VBO IBO IH VT IPP CO Notes: Stand-off Voltage Parameter Leakage current at stand-off voltage Breakdown voltage Breakdown current Breakover voltage Breakover current Holding current On state voltage Peak pulse current Off-state capacitance NOTE: 2 NOTE: 1 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not exceed 30ms. 2. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias. I IPP IBO IH IBR IDRM VT VDRM VBR VBO V UNDER DEVELOPMENT DS30361 Rev. 2 - 1 2 of 4 TB0640M - TB3500M 100 NORMALIZED BREAKDOWN VOLTAGE 1.2 NEW PRODUCT I(DRM), OFF-STATE CURRENT (uA) 1.15 VBR= (TJ) VBR = (TJ = 25°C) 10 1.1 1 1.05 0.1 VDRM = 50V 1 0.01 0.95 0.001 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 1 Off-State Current vs. Junction Temperature 0.9 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Fig. 2 Relative Variation of Breakdown Voltage vs. Junction Temperature 1.1 NORMALIZED BREAKDOWN VOLTAGE 100 1.05 VBO = (TJ = 25°C) IT, ON-STATE CURRENT (A) VBO= (TJ) 10 1 Tj = 25°C 0.95 -50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (ºC) J Fig. 3 Relative Variation of Breakover Voltage vs. Junction Temperature 1 1 1.5 2 2.5 3 3.5 4 4.5 5 VT, ON-STATE VOLTAGE (V) Fig. 4 On-State Current vs. On-State Voltage 1 1.4 1.3 NORMALIZED HOLDING CURRENT 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 -50 -25 0 25 50 75 100 125 IH = (TJ) IH = (TJ = 25°C) NORMALIZED CAPACITANCE CO= (VR) CO = (VR = 1V) Tj = 25°C f = 1 Mhz VRMS = 1V 0.1 1 10 100 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 Relative Variation of Holding Current vs. Junction Temperature VR, REVERSE VOLTAGE (V) Fig. 6 Relative Variation of Junction Capacitance vs. Reverse Voltage Bias UNDER DEVELOPMENT DS30361 Rev. 2 - 1 3 of 4 TB0640M - TB3500M Ordering Information (Note 3) Packaging Shipping NEW PRODUCT Device TB0640M-13 TB0720M-13 TB0900M-13 TB1100M-13 TB1300M-13 TB1500M-13 TB1800M-13 TB2300M-13 TB2600M-13 TB3100M-13 TB3500M-13 Notes: SMB 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YWW XXXXX XXXXX = Product Type Marking Code YWW = Date Code Marking Y = Year ex: 2 = 2002 WW = Week Date Code Key Year Code 2002 2 2003 3 2004 4 UNDER DEVELOPMENT DS30361 Rev. 2 - 1 4 of 4 TB0640M - TB3500M