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US1B

US1B

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    US1B - 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER - Diodes Incorporated

  • 数据手册
  • 价格&库存
US1B 数据手册
US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features · · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss Surge Overload Rating to 30A Peak Ideally Suited for Automated Assembly Plastic Material: UL Flammability Classification Rating 94V-0 B Dim A B C D SMA Min 2.29 4.00 1.27 0.15 4.80 0.10 0.76 2.01 Max 2.92 4.60 1.63 0.31 5.59 0.20 1.52 2.62 A C Mechanical Data · · · · · · Case: Molded Plastic Terminals: Solder Plated Terminal - Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.064 grams (approx.) Mounting Position: Any J D E G H J H G E All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TT = 75°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) Forward Voltage Drop Peak Reverse Current at Rated DC Blocking Voltage Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 1) Typical Thermal Resistance, Junction to Terminal Operating and Storage Temperature Range @ IF = 1.0A @ TA = 25°C @ TA = 100°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM trr Cj RqJT Tj, TSTG US1A 50 35 TA = 25°C unless otherwise specified US1B 100 70 US1D 200 140 US1G 400 280 1.0 30 US1J 600 420 US1K 800 560 US1M 1000 700 Unit V V A A 1.0 1.3 5.0 100 50 20 30 -65 to +150 1.7 V mA 75 10 ns pF °C/W °C Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. DS16008 Rev. B1-2 1 of 2 US1A - US1M IF, INSTANTANEOUS FORWARD CURRENT (A) 10 IO, AVERAGE RECTIFIED CURRENT (A) 1.0 US1A - US1D US1G 1.0 US1J - US1M 0.5 0.1 0 25 50 75 100 125 150 Tj - 25°C Pulse Width = 300µs 0.01 0 0.4 0.8 1.2 1.6 2.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics TT, TERMINAL TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve IFSM, PEAK FORWARD SURGE CURRENT (A) 40 Single Half Sine-Wave (JEDEC Method) IR, INSTANTANEOUS REVERSE CURRENT (µA) 1000 30 100 Tj = 100°C 10 20 1.0 Tj = 25°C 10 Tj = 150°C 0.1 0 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Forward Surge Current Derating Curve 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics trr +0.5A 50Ω NI (Non-inductive) Device Under Test 10Ω NI (-) Pulse Generator (Note 2) 0A (+) 50V DC Approx -0.25A (-) 1.0Ω NI Oscilloscope (Note 1) (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 50/100 ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit DS16008 Rev. B1-2 2 of 2 US1A - US1M

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US1B-E3/61T
    •  国内价格
    • 1+0.79434
    • 10+0.76492
    • 100+0.69431
    • 500+0.65901

    库存:335