VN10LP

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – NOVEMBER 2005 FEATURES * 60 Volt VDS * RDS(on)=5Ω VN10LP D G S REFER TO ZVN3306A FOR GRAPHS E-Line TO92 Compatible SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 60 270 3 ± 20 625 -55 to +150 UNIT V mA A V mW °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb = 2 5°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb = 2 5°C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current (1) On State Drain Current(1) Static Drain Source On State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Time (2)(3) Turn-Off Time (2)(3) SYMBOL BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) g fs 100 750 5.0 7.5 MIN. 60 0.8 2.5 100 10 TYP. MAX. UNIT V V nA µA mA Ω Ω mS CONDITIONS. I D=100 µ A, V GS=0V ID=1mA, V DS= V GS V GS= ± 2 0V, V DS=0V V DS=60 V, V GS=0V V DS=15 V, V GS=10V V GS=10V,I D=500mA V GS=5V, I D=200mA V DS=15V,I D=500mA C iss C oss C rss t (on) t (off) 60 25 5 10 10 pF pF pF ns ns V DD ≈ 15V, I D=600mA V DS=25 V, V GS=0V f=1MHz 3-90