0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
VN10LP

VN10LP

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    VN10LP - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET - Diodes Incorporated

  • 数据手册
  • 价格&库存
VN10LP 数据手册
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – NOVEMBER 2005 FEATURES * 60 Volt VDS * RDS(on)=5Ω VN10LP D G S REFER TO ZVN3306A FOR GRAPHS E-Line TO92 Compatible SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 60 270 3 ± 20 625 -55 to +150 UNIT V mA A V mW °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb = 2 5°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb = 2 5°C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current (1) On State Drain Current(1) Static Drain Source On State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Time (2)(3) Turn-Off Time (2)(3) SYMBOL BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) g fs 100 750 5.0 7.5 MIN. 60 0.8 2.5 100 10 TYP. MAX. UNIT V V nA µA mA Ω Ω mS CONDITIONS. I D=100 µ A, V GS=0V ID=1mA, V DS= V GS V GS= ± 2 0V, V DS=0V V DS=60 V, V GS=0V V DS=15 V, V GS=10V V GS=10V,I D=500mA V GS=5V, I D=200mA V DS=15V,I D=500mA C iss C oss C rss t (on) t (off) 60 25 5 10 10 pF pF pF ns ns V DD ≈ 15V, I D=600mA V DS=25 V, V GS=0V f=1MHz 3-90
VN10LP 价格&库存

很抱歉,暂时无法提供与“VN10LP”相匹配的价格&库存,您可以联系我们找货

免费人工找货