1N1190

1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307 1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2007-05-09 13.6 Ø 4+0.5 14.5 Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal case Metallgehäuse Weight approx. Gewicht ca. Standard polarity: Cathode to stud / Kathode am Gewinde Index R: Anode to stud / Anode am Gewinde (e. g. 1N1183R) Standard packaging: bulk Standard Lieferform: lose im Karton 35 A 50 ... 1000 V DO-5 6g Type M6 Dimensions - Maße [mm] Maximum ratings Type Typ 1N1183 = PBY301 1N1184 = PBY302 1N1186 = PBY303 1N1188 = PBY304 1N1190 = PBY305 1N3766 = PBY306 1N3768 = PBY307 Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 50 100 200 400 600 800 1000 TC = 100°C f > 15 Hz TA = 25°C TA = 25°C IFAV IFRM IFSM i2t Tj TS 10.7 SW17 36.7 Grenzwerte Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 60 120 240 480 720 1000 1200 35 A 110 A 1) 450/500 A 1000 A2s -65...+175°C -65...+175°C Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 Max. case temperature TC = 100°C – Max. Gehäusetemperatur TC = 100°C http://www.diotec.com/ © Diotec Semiconductor AG 1 1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307 Characteristics Forward Voltage – Durchlass-Spannung Leakage Current – Sperrstrom Thermal Resistance Junction – Case Wärmewiderstand Sperrschicht – Gehäuse Recommended mounting torque Empfohlenes Anzugsdrehmoment Tj = 25°C Tj = 25°C IF = 100 A VR = VRRM VF IR RthC M6 Kennwerte < 1.5 V < 500 µA < 1 K/W 26 ± 10% lb.in. 3 ± 10% Nm 120 [%] 100 103 [A] 102 80 Tj = 125°C 60 10 Tj = 25°C 40 1 20 IFAV 0 0 TC 50 100 150 [°C] Rated forward current versus case temperature Zul. Richtstrom in Abh. von der Gehäusetemp. IF 10-1 450a-(100a-1,5v) 0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 103 [A] 10 2 îF 10 1 10 102 [n] 103 Peak forward surge current versus number of cycles at 50 Hz Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz 2 http://www.diotec.com/ © Diotec Semiconductor AG