2N3906

2N3906 2N3906 PNP Version 2006-09-12 Power dissipation Verlustleistung CBE Si-Epitaxial-Planar Switching Transistors Si-Epitaxial-Planar Schalttransistoren PNP 625 mW TO-92 (10D3) 0.18 g 16 Plastic case Kunststoffgehäuse 18 Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 2 x 2.54 Dimensions - Maße [mm] Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEBO Ptot - IC Tj TS 9 Grenzwerte (TA = 25°C) 2N3906 40 V 40 V 5V 625 mW 1) 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis 2) IC IC IC IC IC = = = = = 0.1 mA, 1 mA, 10 mA, 50 mA, 100 mA, VCE VCE VCE VCE VCE = = = = = 1 1 1 1 1 V V V V V hFE hFE hFE hFE hFE - VCEsat - VCEsat - VBEsat - VBEsat 60 80 100 60 30 – – Kennwerte (Tj = 25°C) Typ. – – – – – – – – – Max. – – 300 – – 0.25 V 0.40 V 0.85 V 0.95 V Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) 0.65 V – 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 2N3906 Characteristics (Tj = 25°C) Min. Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom - VCE = 30 V, - VEB = 3 V Emitter-Base cutoff current – Emitter-Basis-Reststrom - VCE = 30 V, - VEB = 3 V Gain-Bandwidth Product – Transitfrequenz - IC = 10 mA, - VCE = 20 V, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 100 µA, RG = 1 kΩ, f = 1 kHz Switching times – Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time - VCC = 3 V, - VBE = 0.5 V - IC = 10 mA, - IB1 = 1mA - VCC = 3 V, - IC = 10 mA, - IB1 = - IB2 = 1 mA td tr ts tf RthA – – – – – – – – < 200 K/W 1) 2N3904 35 ns 35 ns 225 ns 75 ns F – – 4 dB CEBO – – 10 pf CCBO – – 4.5 pF fT 250 MHz – – - IEBV – –50 nA - ICBX – – 50 nA Kennwerte (Tj = 25°C) Typ. Max. Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2