2N4403

2N4403 2N4403 PNP Version 2006-10-17 Power dissipation Verlustleistung CBE General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP 625 mW TO-92 (10D3) 0.18 g 16 Plastic case Kunststoffgehäuse 18 Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 2 x 2.54 Dimensions - Maße [mm] Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEB0 Ptot - IC Tj TS 9 Grenzwerte (TA = 25°C) 2N4403 40 V 40 V 5V 625 mW 1) 600 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis 2) IC IC IC IC IC = = = = = 0.1 mA, 1 mA, 10 mA, 150 mA, 500 mA, VCE VCE VCE VCE VCE = = = = = 1V 1V 1V 2V 2V hFE hFE hFE hFE hFE hfe hie hoe hre 30 60 100 100 20 60 Kennwerte (Tj = 25°C) Typ. – – – – – – – – -4 Max. – – – 300 – 500 15 kΩ 30 µS 8*10-4 h-Parameters at/bei - VCE = 10 V, - IC = 1 mA, f = 1 kHz Small signal current gain – Kleinsignal-Stromverstärkung Input impedance – Eingangs-Impedanz Output admittance – Ausgangs-Leitwert Reverse voltage transfer ratio – Spannungsrückwirkung 1.5 kΩ 1 µS 0.1*10 – 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 2N4403 Characteristics (Tj = 25°C) Min. Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom - VCE = 35 V, - VEB = 0,4 V Emitter-Base cutoff current – Emitter-Basis-Reststrom - VCE = 35 V, - VEB = 0,4 V Gain-Bandwidth Product – Transitfrequenz - IC = 20 mA, - VCE = 10 V, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times – Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren - ICon = 10 mA - IBon = 1 mA IBoff = 1 mA td tr ts tf RthA – – – – – – – – < 420 K/W 1) 2N4401 15 ns 20 ns 225 ns 30 ns CEBO – – 30 pf CCBO – – 8.5 pF fT 200 MHz – – - IEBV – –100 nA - ICEX – – 100 nA - VCEsat - VCEsat - VBEsat - VBEsat – – 0.75 V – – – – – 0.40 V 0.75 V 0.95 V 1.3 V Kennwerte (Tj = 25°C) Typ. Max. Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2