2N5401

2N5400 / 2N5401 2N5400 / 2N5401 PNP Version 2006-06-17 Power dissipation Verlustleistung CBE General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP 625 mW TO-92 (10D3) 0.18 g 16 Plastic case Kunststoffgehäuse 18 Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 2 x 2.54 Dimensions - Maße [mm] Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Base current – Basisstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCE0 - VCBO - VEBO Ptot - IC - ICM - IB Tj TS 9 Grenzwerte (TA = 25°C) 2N5400 120 V 130 V 5V 625 mW 1) 600 mA 1A 100 mA -55...+150°C -55…+150°C 2N5401 150 V 160 V Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis 2) - IC = 1 mA, - IC = 10 mA, - IC = 50 mA, - IC = 1 mA, - IC = 10 mA, - IC = 50 mA, - VCE = 5 V - VCE = 5 V - VCE = 5 V - VCE = 5 V - VCE = 5 V - VCE = 5 V 2N5400 hFE hFE hFE hFE hFE hFE - ICBO - ICBO - ICBO - ICBO 30 40 40 50 60 50 – – – – Kennwerte (Tj = 25°C) Typ. – – – – – – – – – – Max. – 180 – – 240 – 100 nA 50 nA 100 µA 50 µA 2N5401 Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 100 V, (E open) - VCB = 120 V, (E open) - VCB = 100 V, Tj = 100°C, (E open) - VCB = 120 V, Tj = 100°C, (E open) 2N5400 2N5401 2N5400 2N5401 1 2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 2N5400 / 2N5401 Characteristics (Tj = 25°C) Min. Emitter-Base-cutoff current – Emitter-Basis-Reststrom - VEB = 3 V, (C open) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA, RS = 10 Ω, f = 1 kHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren 2N5400 2N5401 F F RthA – – – – < 200 K/W 1) 2N5550 / 2N5551 – 8 dB CCBO – – 6 pF fT 100 MHz – 400 MHz - VBEsat - VBEsat – – – – 1.0 V 1.0 V - IEBO - VCEsat - VCEsat – – – –– – 50 nA 0.2 V 0.5 V Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) Kennwerte (Tj = 25°C) Typ. Max. 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [°C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG 2