2N5551

2N5550 / 2N5551 2N5550 / 2N5551 NPN Version 2006-06-17 Power dissipation Verlustleistung CBE General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN 625 mW TO-92 (10D3) 0.18 g 16 Plastic case Kunststoffgehäuse 18 Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 2 x 2.54 Dimensions - Maße [mm] Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCEO VCBO VEBO Ptot IC Tj TS 9 Grenzwerte (TA = 25°C) 2N5550 140 V 160 V 6V 625 mW 1) 600 mA -55...+150°C -55…+150°C 2N5551 160 V 180 V Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis 2) VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 50 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 50 mA IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 2N5550 hFE hFE hFE hFE hFE hFE VCEsat VCEsat VCEsat VCEsat 60 60 20 80 80 30 – – – – Kennwerte (Tj = 25°C) Typ. – – – – – – – – – – Max. – 250 – – 250 – 0.15 V 0.15 V 0.25 V 0.20 V 2N5551 Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) 2N5550 2N5551 2N5550 2N5551 1 2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 2N5550 / 2N5551 Characteristics (Tj = 25°C) Min. Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VCB = 100 V, (E open) VCB = 120 V, (E open) Emitter-Base cutoff current – Emitter-Basis-Reststrom VEB = 4 V, (C open) Gain-Bandwidth Product – Transitfrequenz IC = 10 mA, VCE = 10 V, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 µA, RG = 2 kΩ, f = 30 Hz ... 15 kHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren 2N5550 2N5551 F F RthA – – – – < 200 K/W 1) 2N5400 / 2N5401 10 dB 8 dB CCBO – – 6 pF fT 100 MHz – 300 MHz IEBO – – 50 nA 2N5550 2N5551 VBEsat VBEsat VBEsat VBEsat ICBO ICBO – – – – – – – – – – – – 1.0 V 1.2 V 1.0 V 1.0 V 100 nA 50 nA Kennwerte (Tj = 25°C) Typ. Max. Collector-Base cutoff current – Kollektor-Base-Reststrom 2N5550 2N5551 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [°C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG 2