2N7000

2N7000 2N7000 N Version 2011-02-16 Power dissipation Verlustleistung S GD N-Channel Enhancement Mode Field Effect Transistor N-Kanal Feldeffekt Transistor – Anreicherungstyp N 350 mW TO-92 (10D3) 0.18 g 16 Plastic case Kunststoffgehäuse Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 9 18 2 x 2.54 Dimensions - Maße [mm] Maximum ratings (TA = 25°C) Drain-Source-voltage – Drain-Source-Spannung Drain-Gate-voltage – Drain-Gate-Spannung Gate-Source-voltage – Gate-Source-Spannung Power dissipation – Verlustleistung Drain current continuos – Drainstrom (dc) Peak Drain current – Drain-Spitzenstrom Operating Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur RGS ≤ 1 MΩ dc tp < 50 µs VDSS VDGR VGSS VGSS Ptot ID IDM Tj TS Grenzwerte (TA = 25°C) 2N7000 60 V 60 V ± 20 V ± 40 V 350 mW 200 mA 500 mA 150°C -55…+150°C © Diotec Semiconductor AG http://www.diotec.com/ 1 2N7000 Characteristics (Tj = 25°C) Drain-Source breakdown voltage – Drain-Source Durchbruchspannung ID = 10 µA Drain-Source leakage current – Drain-Source Leckstrom VDS = 48 V VDS = 48 V, Tj = 125°C Gate-Body leakage current – Gate-Substrat Leckstrom VGS = ±15 V Gate-Threshold voltage – Gate-Source Schwellspannung VGS = VDS, ID = 1 mA Drain-Source on-voltage – Drain-Source-Spannung VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 75 mA VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 75 mA Forward Transconductance – Übertragungssteilheit VDS = 10 V, ID = 200 mA Input Capacitance – Eingangskapazität VDS = 25 V, f = 1 MHz Output Capacitance – Ausgangskapazität VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance – Rückwirkungskapazität VDS = 25 V, f = 1 MHz Turn-On Delay Time – Einschaltverzögerung VDD= 15 V, RL= 30 Ω, ID= 0.5 A, VGS= 10 V, RG= 25 Ω Turn-Off Delay Time – Ausschaltverzögerung VDD= 15 V, RL= 30 Ω, ID= 0.5 A, VGS= 10 V, RG= 25 Ω Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft toff RthA 10 ns < 357 K/W 1) ton 10 ns Crss 5 pF Coss 25 pF Ciss 60 pF VDS(on) 2.5 V 0.45 V 5Ω 6Ω 100 mS VGS(th) 0.8 V 3V ±IGSS 10 nA V(BR)DSS G short IDSS IDSS 1 µA 1 mA 60 V Kennwerte (Tj = 25°C) Min. Typ. Max. Drain-Source on-state resistance – Drain-Source Einschaltwiderstand RDS(on) RDS(on) gFS 1 Device mounted on standard PCB material Bauteil montiert auf Standard-Leiterplattenmaterial http://www.diotec.com/ © Diotec Semiconductor AG 2