BC327-40BK

BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2010-06-23 Power dissipation Verlustleistung ±0.1 CBE min 12.5 4.6 ±0.1 4.6 2 x 1.27 625 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Special packaging bulk Sonder-Lieferform Schüttgut Dimensions - Maße [mm] Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC327 BC328 Collector-Emitter-volt. – Kollektor-Emitter-Spannung E-B short - VCES 50 V 30 V Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO 45 V 25 V Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5V Power dissipation – Verlustleistung Ptot 625 mW 1) Collector current – Kollektorstrom (dc) - IC 800 mA Peak Collector current – Kollektor-Spitzenstrom - ICM 1A Base current – Basisstrom - IB 100 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 2) - VCE = 1 V, - IC = 100 mA Group -16 Group -25 Group -40 hFE hFE hFE 100 160 250 160 250 400 250 400 630 - VCE = 1 V, - IC = 300 mA Group -16 Group -25 Group -40 hFE hFE hFE 60 100 170 130 200 320 – – – – – 0.7 V Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) - IC = 500 mA, - IB = 50 mA 1 2 - VCEsat Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 BC327-xBK / BC328-xBK Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. - VBE – – 1.2 V Base-Emitter-voltage – Basis-Emitter-Spannung 2) - VCE = 1 V, - IC = 300 mA, Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom - VCE = 45 V, (B-E short) - VCE = 25 V, (B-E short) BC327 BC328 - ICES - ICES – – 2 nA 2 nA 100 nA 100 nA - VCE = 45 V, Tj = 125°C, (B-E short) - VCE = 25 V, Tj = 125°C, (B-E short) BC327 BC328 - ICES - ICES – – – – 10 µA 10 µA fT – 100 MHz – CCBO – 12 pF – Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft < 200 K/W 1) RthA Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren BC337 / BC338 Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ BC327-16 BC327-25 BC327-40 BC328-16 BC328-25 BC328-40 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [°C] Power dissipation versus ambient temperature ) 1 Verlustleistung in Abh. von d. Umgebungstemp. ) 1 2 1 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG