BC327

BC327 / BC328 BC327 / BC328 PNP Version 2006-05-30 Power dissipation Verlustleistung CBE General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP 625 mW TO-92 (10D3) 0.18 g 16 Plastic case Kunststoffgehäuse 18 Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 2 x 2.54 Dimensions - Maße [mm] Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Emitter-volt. – Kollektor-Emitter-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Base current – Basisstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur E-B short B open C open - VCES - VCEO - VEBO Ptot - IC - ICM - IB Tj TS 9 Grenzwerte (TA = 25°C) BC327 50 V 45 V 5V 625 mW 1) 800 mA 1A 100 mA -55...+150°C -55…+150°C BC328 30 V 25 V Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis 2) - VCE = 1 V, - IC = 100 mA Group -16 Group -25 Group -40 Group -16 Group -25 Group -40 hFE hFE hFE hFE hFE hFE - VCEsat 100 160 250 60 100 170 – Kennwerte (Tj = 25°C) Typ. 160 250 400 130 200 320 – Max. 250 400 630 – – – 0.7 V - VCE = 1 V, - IC = 300 mA Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) - IC = 500 mA, - IB = 50 mA 1 2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 BC327 / BC328 Characteristics (Tj = 25°C) Min. Base-Emitter-voltage – Basis-Emitter-Spannung 2) - VCE = 1 V, - IC = 300 mA, Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom - VCE = 45 V, (B-E short) - VCE = 25 V, (B-E short) - VCE = 45 V, Tj = 125°C, (B-E short) - VCE = 25 V, Tj = 125°C, (B-E short) Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ CCBO RthA – 12 pF < 200 K/W 1) BC337 / BC338 BC327-16 BC327-25 BC327-40 BC328-16 BC328-25 BC328-40 – fT – 100 MHz – BC327 BC328 BC327 BC328 - ICES - ICES - ICES - ICES – – – – 2 nA 2 nA – – 100 nA 100 nA 10 µA 10 µA - VBE – – 1.2 V Kennwerte (Tj = 25°C) Typ. Max. 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [°C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG 2