BC337 / BC338
BC337 / BC338 NPN
Version 2006-05-30 Power dissipation Verlustleistung
CBE
General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz
NPN
625 mW TO-92 (10D3) 0.18 g
16
Plastic case Kunststoffgehäuse
18
Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack
2 x 2.54
Dimensions - Maße [mm]
Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Emitter-volt. – Kollektor-Emitter-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Base current – Basisstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur E-B short B open C open VCES VCEO VEBO Ptot IC ICM IB Tj TS
9
Grenzwerte (TA = 25°C) BC337 50 V 45 V 5V 625 mW 1) 800 mA 1A 100 mA -55...+150°C -55…+150°C BC338 30 V 25 V
Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis 2) VCE = 1 V, IC = 100 mA Group -16 Group -25 Group -40 Group -16 Group -25 Group -40 hFE hFE hFE hFE hFE hFE VCEsat 100 160 250 60 100 170 –
Kennwerte (Tj = 25°C) Typ. 160 250 400 130 200 320 – Max. 250 400 630 – – – 0.7 V
VCE = 1 V, IC = 300 mA
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) IC = 500 mA, IB = 50 mA
1 2
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/
© Diotec Semiconductor AG
1
BC337 / BC338 Characteristics (Tj = 25°C) Min. Base-Emitter-voltage – Basis-Emitter-Spannung 2) VCE = 1 V, IC = 300 mA, Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom VCE = 45 V, (B-E short) VCE = 25 V, (B-E short) VCE = 45 V, Tj = 125°C, (B-E short) VCE = 25 V, Tj = 125°C, (B-E short) Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 50 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ CCBO RthA – 12 pF < 200 K/W 1) BC327 / BC328 BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 – fT – 100 MHz – BC337 BC338 BC337 BC338 ICES ICES ICES ICES – – – – 2 nA 2 nA – – 100 nA 100 nA 10 µA 10 µA VBE – – 1.2 V Kennwerte (Tj = 25°C) Typ. Max.
120 [%] 100
80
60
40
20 Ptot 0 0 TA 50 100 150 [°C]
Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1)
2 1
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG
2
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