BC549XBK

BC546xBK ... BC549xBK BC546xBK ... BC549xBK NPN Version 2009-12-03 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse NPN 500 mW TO-92 (10D3) 0.18 g 4.6 4.6 ±0.1 ±0.1 CBE min 12.5 Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Special packaging bulk Sonder-Lieferform Schüttgut 2 x 1.27 Dimensions - Maße [mm] Maximum ratings (TA = 25°C) BC546 Collector-Emitter-voltage Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Peak Emitter current – Emitter-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25°C) Group A DC current gain – Kollektor-Basis-Stromverhältnis 2) VCE = 5 V, IC = 10 µA VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 100 mA h-Parameters at/bei VCE = 5 V, IC = 2 mA, f = 1 kHz Small signal current gain Kleinsignal-Stromverstärkung Input impedance – Eingangs-Impedanz Output admittance – Ausgangs-Leitwert Reverser voltage transfer ratio Spannungsrückwirkung hfe hie hoe hre typ. 220 1.6 ... 4.5 kΩ 18 < 30 µS typ. 1.5*10-4 hFE hFE hFE typ. 90 110 ... 220 typ. 120 E-B short B open E open C open VCES VCEO VCBO VEB0 Ptot IC ICM IBM - IEM Tj TS 85 V 65 V 80 V Grenzwerte (TA = 25°C) BC547 50 V 45 V 50 V 5V 500 mW 1) 100 mA 200 mA 200 mA 200 mA -55...+150°C -55…+150°C Kennwerte (Tj = 25°C) Group B typ. 150 200 ... 450 typ. 200 Group C typ. 270 420 ... 800 typ. 400 BC548/549 30 V 30 V 30 V typ. 330 3.2 ...8.5 kΩ 30 < 60 µS typ. 2*10-4 typ. 600 6 ... 15 kΩ 60 < 110 µS typ. 3*10-4 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG 1 BC546xBK ... BC549xBK Characteristics (Tj = 25°C) Min. Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom VCE = 80 V, (B-E short) VCE = 50 V, (B-E short) VCE = 30 V, (B-E short) VCE = 80 V, Tj = 125°C, (B-E short) VCE = 50 V, Tj = 125°C, (B-E short) VCE = 30 V, Tj = 125°C, (B-E short) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base saturation voltage – Basis-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz BC546 / BC547 BC548 / BC549 F F RthA – – 2 dB 1.2 dB < 200 K/W 1) BC556 ... BC559 BC546A BC547A BC548A BC546B BC547B BC548B BC549B BC547C BC548C BC549C 10 dB 4 dB CEB0 – 9 pF – CCBO – 3.5 pF 6 pF fT – 300 MHz – VBE VBE 580 mV – 660 mV – 700 mV 720 mV VBEsat VBEsat – – 700 mV 900 mV – – BC546 BC547 BC548 / BC549 BC546 BC547 BC548 / BC549 ICES ICES ICES ICES ICES ICES VCEsat VCEsat – – – – – – – – 0.2 nA 0.2 nA 0.2 nA – – – 80 mV 200 mV 15 nA 15 nA 15 nA 4 µA 4 µA 4 µA 200 mV 600 mV Kennwerte (Tj = 25°C) Typ. Max. Collector-Emitter saturation voltage – Kollektor-EmitterSättigungsspg. 2) Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG 2