BC556

BC556 ... BC559 BC556 ... BC559 PNP Version 2006-05-31 Power dissipation – Verlustleistung CBE General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP 500 mW TO-92 (10D3) 0.18 g Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. 18 9 16 Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 2 x 2.54 Dimensions - Maße [mm] Maximum ratings (TA = 25°C) BC556 Collector-Emitter-voltage Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Peak Emitter current – Emitter-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25°C) Group A DC current gain – Kollektor-Basis-Stromverhältnis 2) - VCE = 5 V, - IC = 10 µA - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 100 mA Small signal current gain Kleinsignal-Stromverstärkung Input impedance – Eingangs-Impedanz Output admittance – Ausgangs-Leitwert Reverse voltage transfer ratio Spannungsrückwirkung hFE hFE hFE typ. 90 110 ... 220 typ. 120 E-B short B open E open C open - VCES - VCEO - VCBO - VEB0 Ptot - IC - ICM - IBM IEM Tj TS 80 V 65 V 80 V Grenzwerte (TA = 25°C) BC557 50 V 45 V 50 V 5V 500 mW 1) 100 mA 200 mA 200 mA 200 mA -55...+150°C -55…+150°C Kennwerte (Tj = 25°C) Group B typ. 150 200 ... 450 typ. 200 Group C typ. 270 420 ... 800 typ. 400 BC558/559 30 V 30 V 30 V h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz hfe hie hoe hre typ. 220 1.6 ... 4.5 kΩ 18 < 30 µS typ. 1.5*10-4 typ. 330 3.2 ...8.5 kΩ 30 < 60 µS typ. 2*10-4 typ. 600 6 ... 15 kΩ 60 < 110 µS typ. 3*10-4 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG 1 BC556 ... BC559 Characteristics (Tj = 25°C) Min. Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom - VCE = 80 V, (B-E short) - VCE = 50 V, (B-E short) - VCE = 30 V, (B-E short) - VCE = 80 V, Tj = 125°C, (B-E short) - VCE = 50 V, Tj = 125°C, (B-E short) - VCE = 30 V, Tj = 125°C, (B-E short) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz BC556 ... BC558 BC559 F F RthA – – 2 dB 1 dB < 200 K/W 1) BC546 ... BC549 BC556A BC557A BC558A BC556B BC557B BC558B BC559B BC557C BC558C BC559C 10 dB 4 dB CEB0 – 10 pF – CCBO – 3.5 pF 6 pF fT – 150 MHz – - VBE - VBE 600 mV – 660 mV – 750 mV 800 mV BC546 BC547 BC548 / BC549 BC546 BC547 BC548 / BC549 - ICES - ICES - ICES - ICES - ICES - ICES - VCEsat - VCEsat - VBEsat - VBEsat – – – – – – – – – – 0.2 nA 0.2 nA 0.2 nA – – – 80 mV 250 mV 700 mV 900 mV 15 nA 15 nA 15 nA 4 µA 4 µA 4 µA 300 mV 650 mV – – Kennwerte (Tj = 25°C) Typ. Max. Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg 2) Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG 2