BC808

BC807 / BC808 BC807 / BC808 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0. 4 3 1.3±0.1 1 .1 PNP 310 mW SOT-23 (TO-236) 0.01 g Version 2007-04-13 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1 .9 2 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Emitter-volt. – Kollektor-Emitter-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Emitter current – Emitter-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur E-B short B open C open - VCES - VCEO - VEBO Ptot - IC - ICM IEM - IBM Tj TS 2.5 max Grenzwerte (TA = 25°C) BC807 50 V 45 V 5V 310 mW 1) 800 mA 1A 1A 200 mA -55...+150°C -55…+150°C BC808 30 V 25 V Characteristics (Tj = 25°C) DC current gain – Kollektor-Basis-Stromverhältnis ) - VCE = 1 V, - IC = 100 mA Group -16 Group -25 Group -40 all groups hFE hFE hFE hFE 2 2 Kennwerte (Tj = 25°C) Min. 100 160 250 40 – – Typ. – – – – – – Max. 250 400 630 – 0.7 V 1.3 V - VCE = 1 V, - IC = 500 mA - IC = 500 mA, - IB = 50 mA - IC = 500 mA, - IB = 50 mA Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. ) - VCEsat 2 Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung ) - VBEsat 1 2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 BC807 / BC808 Characteristics (Tj = 25°C) Min. Base-Emitter-voltage – Basis-Emitter-Spannung 2) - VCE = 1 V, - IC = 500 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 20 V, (E open) - VCB = 20 V, Tj = 125°C, (E open) Emitter-Base cutoff current – Emitter-Basis-Reststrom - VEB = 4 V, (C open) Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren CCBO RthA – 12 pF < 420 K/W 1) BC817 / BC818 – fT – 100 MHz – - IEB0 – – 100 nA - ICB0 - ICB0 – – – – 100 nA 5 µA - VBE – – 1.2 V Kennwerte (Tj = 25°C) Typ. Max. Marking of available current gain groups per type BC807-16 = 5A or 5CR BC808-16 = 5E or 5CR Stempelung der lieferbaren Stromverstärkungsgruppen pro BC807-25 = 5B or 5CS BC808-25 = 5F or 5CS Typ BC807-40 = 5C or 5CT BC808-40 = 5G or 5CT 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [°C] 1 Power dissipation versus ambient temperature ) 1 Verlustleistung in Abh. von d. Umgebungstemp. ) 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2