BC847PN

BC847PN BC847PN NPN PNP Complementary Surface Mount General Purpose Si-Planar Transistors Komplementäre Si-Planar Transistoren für die Oberflächenmontage NPN PNP 300 mW SOT-363 0.01 g Version 2006-09-05 2±0.1 2 x 0.65 6 5 4 0.9±0.1 1.25±0.1 2.1±0.1 Power dissipation Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 2 3 2.4 Dimensions - Maße [mm] 6 = C1 5 = B2 4 = E2 1 = E1 2 = B1 3 = C2 Maximum ratings (TA = 25°C) per transistor – pro Transistor Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCBO VCEO VEB0 Ptot IC ICM IBM Tj TS Grenzwerte (TA = 25°C) BC847PN 45 V 50 V 6V 300 mW 1) 100 mA 200 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis VCE = 5 V, IC = 2 mA - VCE = 5 V, - IC = 2 mA IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA T1 - NPN T2 - PNP hFE hFE VCEsat VCEsat - VCEsat - VCEsat 200 220 – – – – Kennwerte (Tj = 25°C) Typ. – – – – – – Max. 450 475 250 mV 600 mV 300 mV 650 mV Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) T1 - NPN T2 - PNP 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 BC847PN Characteristics (Tj = 25°C) Min. Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V - IC = 2 mA, - VCE = 5 V - IC = 10 mA, - VCE = 5 V VCB = 30 V, (E open) - VCB = 30 V, (E open) Emitter-Base cutoff current VEB = 5 V, (C open) - VEB = 5 V, (C open) Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz - VCE = 5 V, - IC = 10 mA, f = 100 MHz VCB = 10 V, IE =ie = 0, f = 1 MHz - VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Pinning – Anschlussbelegung T1: E1 = 1, C1 = 6, B1 = 2 T2: E2 = 4, C2 = 3, B2 = 5 1 T1 Kennwerte (Tj = 25°C) Typ. 700 mV 900 mV 700 mV – – – – – – – – – – – – – < 420 K/W 1) 6 5 4 T2 Max. – – – 950 mV 700 mV 720 mV 750 mV 820 mV 15 nA 15 nA 100 nA 100 nA – – 6 pF 4.5 pF T1 - NPN T2 - PNP VBEsat VBEsat - VBEsat - VBEsat VBE VBE - VBE - VBE ICB0 - ICB0 IEB0 - IEB0 fT fT CCBO CCBO RthA – – – – 580 mV – 600 mV – – – – – 100 MHz 100 MHz – – T1 - NPN T2 - PNP Collector-Base cutoff current – Kollektor-Basis-Reststrom T1 - NPN T2 - PNP T1 - NPN T2 - PNP T1 - NPN T2 - PNP T1 - NPN T2 - PNP Collector-Base Capacitance – Kollektor-Basis-Kapazität 2 3 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2