BC847W

BC846W ... BC849W BC846W ... BC849W NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2 0.3 ±0.1 NPN 200 mW SOT-323 0.01 g Version 2006-06-27 1 ±0.1 3 Plastic case Kunststoffgehäuse 1.25±0.1 Type Code 1 2 ±0.1 2.1 Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.3 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC846W BC847W 45 V 50 V 6V 200 mW ) 100 mA 200 mA 200 mA 200 mA -55...+150°C -55…+150°C 1 BC848W BC849W 30 V 30 V 5V Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Peak Emitter current – Emitter-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur E open C open VCBO VCEO VEB0 Ptot IC ICM IBM - IEM Tj TS 65 V 80 V Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis VCE = 5 V, IC = 10 µA Group A Group B Group C Group A Group B Group C hFE hFE hFE hFE hFE hFE VCEsat VCEsat – – – 110 200 420 – – Kennwerte (Tj = 25°C) Typ. 90 150 270 180 290 520 90 mV 200 mV Max. – – – 220 450 800 250 mV 600 mV VCE = 5 V, IC = 2 mA Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 BC846W ... BC849W Characteristics (Tj = 25°C) Min. Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 30 V, (E open) VCE = 30 V, Tj = 125°C, (E open) Emitter-Base cutoff current VEB = 5 V, (C open) Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz BC846W ... BC848W BC849W F F RthA – – 2 dB 1.2 dB < 620 K/W 1) BC856W ... BC859W BC846AW = 1A BC847AW = 1E BC848AW = 1J BC846BW = 1B BC847BW = 1F BC848BW = 1K BC849BW = 2B BC847CW = 1G BC848CW = 1L BC849CW = 2C 10 dB 4 dB CEB0 – 9 pF – CCBO – 3.5 pF 6 pF fT 100 MHz – – IEB0 – – 100 nA ICB0 ICB0 – – – – 15 nA 5 µA VBE VBE 580 mV – 660 mV – 700 mV 720 mV VBEsat VBEsat – – 700 mV 900 mV – – Kennwerte (Tj = 25°C) Typ. Max. Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking of available current gain groups per type Stempelung der lieferbare Stromverstärkungsgruppen pro Typ 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2