BC856S

BC856S ... BC859S BC856S ... BC859S PNP Surface Mount General Purpose Si-Epi-Planar Double-Transistors Si-Epi-Planar Universal-Doppeltransistoren für die Oberflächenmontage Power dissipation Verlustleistung 1.25±0.1 PNP 300 mW SOT-363 0.01 g Version 2006-08-01 2 6 ±0.1 2 x 0.65 5 4 0.9±0.1 2.1 Type Code 1 2 3 ±0.1 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 2.4 Dimensions - Maße [mm] 6 = C1 5 = B2 4 = E2 1 = E1 2 = B1 3 = C2 Maximum ratings (TA = 25°C) per transistor – pro Transistor Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Peak Emitter current – Emitter-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur E open C open - VCBO - VCEO - VEB0 Ptot - IC - ICM - IBM IEM Tj TS Grenzwerte (TA = 25°C) BC856S 65 V 80 V BC857S 45 V 50 V 5V 300 mW 1) 100 mA 200 mA 200 mA 200 mA -55...+150°C -55…+150°C BC858S BC859S 30 V 30 V Characteristics (Tj = 25°C) per transistor – pro Transistor DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA - VCE = 5 V, - IC = 2 mA h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz Small signal current gain – Kleinsignal-Stromverstärkung Input impedance – Eingangs-Impedanz Output admittance – Ausgangs-Leitwert Reverser voltage transfer ratio – Spannungsrückwirkung hfe hie hoe hre – 1.6 kΩ 18 µS – hFE hFE – 110 Min. Kennwerte (Tj = 25°C) Typ. 90 ... 270 – 220 ... 600 – – 1.5 ... 3*10-4 Max. – 800 – 15 kΩ 110 µS – 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 1 BC856S ... BC859S Characteristics (Tj = 25°C) per transistor – pro Transistor Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 125°C, (E open) Emitter-Base cutoff current - VEB = 5 V, (C open) Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Pinning – Anschlussbelegung T1: E1 = 1, C1 = 6, B1 = 2 T2: E2 = 4, C2 = 3, B2 = 5 1 T1 Kennwerte (Tj = 25°C) Min. - VCEsat - VCEsat - VBEsat - VBEsat - VBE - VBE - ICB0 - ICB0 - IEB0 fT CCBO CEB0 RthA – – – – 600 mV – – – – 100 MHz – – Typ. 90 mV 200 mV 700 mV 900 mV 650 mV – – – – – – 10 pF < 420 K/W 1) BC846S ... BC849S 6 5 4 T2 Max. 250 mV 600 mV – – 750 mV 820 mV 15 nA 5 µA 100 nA – 6 pF – 2 3 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2