BC856W_11

BC856W ... BC859W BC856W ... BC859W PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2 0.3 ±0.1 PNP 200 mW SOT-323 0.01 g Version 2011-07-11 1 ±0.1 3 Plastic case Kunststoffgehäuse 1.25±0.1 Type Code 1 2 2.1±0.1 Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.3 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC856W BC857W 45 V 50 V 5V 200 mW 1) 100 mA 200 mA 200 mA 200 mA -55...+150°C -55…+150°C BC858W BC859W 30 V 30 V Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Peak Emitter current – Emitter-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur E open C open - VCEO - VCBO - VEBO Ptot - IC - ICM - IBM IEM Tj TS 65 V 80 V Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA Group A Group B Group C Group A Group B Group C HFE hFE hFE HFE hFE hFE - VCEsat - VCEsat – – – 125 220 420 – – Kennwerte (Tj = 25°C) Typ. 140 250 480 180 290 520 75 mV 250 mV Max. – – – 250 475 800 300 mV 650 mV - VCE = 5 V, - IC = 2 mA Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 BC856W ... BC859W Characteristics (Tj = 25°C) Min. Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 125°C, (E open) Emitter-Base cutoff current - VEB = 5 V, (C open) Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz BC856W ... BC858W BC859W F F RthA – – – 1 dB < 620 K/W 1) BC846W ... BC849W BC856AW = 3A BC857AW = 3E BC858AW = 3J BC856BW = 3B BC857BW = 3F BC858BW = 3K BC859BW = 4B BC857CW = 3G BC858CW = 3L BC859CW = 4C 10 dB 4 dB CEBO – 10 pF 15 pF CCBO – – 4.5 pF fT 100 MHz – – - IEBO – – 100 nA - ICBO - ICBO – – – – 15 nA 5 µA - VBE - VBE 600 mV – 650 mV – 750 mV 820 mV - VBEsat - VBEsat – – 700 mV 850 mV – – Kennwerte (Tj = 25°C) Typ. Max. Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking of available current gain groups per type Stempelung der lieferbare Stromverstärkungsgruppen pro Typ 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2