BC858

BC856 ... BC860 BC856 ... BC860 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 PNP 250 mW SOT-23 (TO-236) 0.01 g Version 2011-07-11 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) 2.5 max Grenzwerte (TA = 25°C) BC856 BC857 BC860 45 V 50 V 5V 250 mW 1) 100 mA 200 mA -55...+150°C -55…+150°C BC858 BC859 30 V 30 V Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEBO Ptot - IC - ICM Tj TS 65 V 80 V Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA Group A Group B Group C Group A Group B Group C HFE hFE hFE HFE hFE hFE - VCEsat - VCEsat - VBEsat - VBEsat – – – 125 220 420 – – – – Kennwerte (Tj = 25°C) Typ. 90 150 270 180 290 520 – – 700 mV 900 mV Max. – – – 250 475 800 300 mV 650 mV – – - VCE = 5 V, - IC = 2 mA Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 BC856 ... BC860 Characteristics (Tj = 25°C) Min. Base-Emitter-voltage – Basis-Emitter-Spannung 2) - VCE = 5 V, IC = - 2 mA - VCE = 5 V, IC = - 10 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 125°C, (E open) Emitter-Base cutoff current - VEB = 5 V, (C open) Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA RG = 2 kΩ, f = 1 kHz, Δf = 200 Hz BC856 ... BC858 BC859 ... BC860 F F RthA – – 2 dB 1.2 dB < 420 K/W 1) BC846 ... BC850 BC856A = 3A BC856B = 3B BC857A = 3E BC857B = 3F BC857C = 3G BC860B = 3F BC860C = 3G or 4G BC858A = 3E BC858B = 3F BC858C = 3G BC859B = 3F BC859C = 3G or 4C 10 dB 4 dB CEB0 – 9 pF – CCBO – – 4.5 pF fT 100 MHz – – - IEBO – – 100 nA - ICBO - ICBO – – – – 15 nA 4 µA - VBE - VBE 600 mV – – – 750 mV 720 mV Kennwerte (Tj = 25°C) Typ. Max. Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking of available current gain groups Stempelung der lieferbaren Stromverstärkungsgruppen 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2