BCP52

BCP51 ... BCP53 BCP51 ... BCP53 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation Verlustleistung Plastic case Kunststoffgehäuse Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 3.5 ±0.2 PNP 1.3 W SOT-223 0.04 g Version 2006-06-26 6.5 3 ±0.2 ±0.1 1.65 4 Type Code 1 0.7 2.3 2 3.25 3 Dimensions - Maße [mm] 1=B 2/4 = C 3=E Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEBO Ptot - IC - ICM - IBM Tj TS 7 ±0.3 Grenzwerte (TA = 25°C) BCP51 45 V 45 V BCP52 60 V 60 V 5V 1.3 W 1) 1A 1.5 A 200 mA -55...+150°C -55…+150°C BCP53 80 V 100 V Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis ) 2 Kennwerte (Tj = 25°C) Typ. Max. - VCE = 2 V, - IC = 5 mA - VCE = 2 V, - IC = 150 mA all groups Group -6 Group -10 Group -16 all groups hFE hFE hFE hFE hFE 2 25 40 63 100 25 – – – – – – – – 100 160 250 – 0.5 V 1V - VCE = 2 V, - IC = 500 mA - IC = 500 mA, - IB = 50 mA Base-Emitter voltage – Basis-Emitter-Spannung ) 2 Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. ) - VCEsat - VBE - IC = 500 mA, - IB = 50 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 BCP51 ... BCP53 Characteristics (Tj = 25°C) Min. Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCB = 30 V, Tj = 125°C, (E open) Emitter-Base cutoff current – Emitter-Basis-Reststrom - VEB = 5 V, (C open) Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz DC current gain ratio of the complementary pairs Verhältnis der Stromverstärkungen komplementärer Paare l IC l = 150 mA, l VCE l = 2 V Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Thermal resistance junction to soldering point Wärmewiderstand Sperrschicht – Lötpad Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren hFE1/hFE2 RthA RthS – – < 93 K/W 1) < 27 K/W BCP54 ... BCP56 1.6 fT – 120 MHz – - IEB0 – – 100 nA - ICB0 - ICB0 – – – – 100 nA 10 µA Kennwerte (Tj = 25°C) Typ. Max. 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [°C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2