BCW30

BCW29, BCW30 BCW29, BCW30 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 PNP 250 mW SOT-23 (TO-236) 0.01 g Version 2006-07-28 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEB0 Ptot - IC - ICM - IBM Tj TS 2.5 max Grenzwerte (TA = 25°C) BCW29 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 200 mA -55...+150°C -55…+150°C BCW30 Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA - VCE = 5 V, - IC = 2 mA BCW29 BCW30 BCW29 BCW30 hFE hFE hFE hFE - VCEsat - VCEsat – – 120 215 – – Kennwerte (Tj = 25°C) Typ. 90 150 – – 80 mV 150 mV Max. – – 260 500 300 mV – Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 50 mA, - IB = 2.5 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 BCW29, BCW30 Characteristics (Tj = 25°C) Min. Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 50 mA, - IB = 2.5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) - IC = 2 mA, - VCE = 5 V Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 100°C, (E open) Emitter-Base cutoff current - VEB = 5 V, (C open) Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking - Stempelung F RthA – – < 420 K/W 1) BCW31 ... BCW33 BCW29 = C1 BCW30 = C2 10 dB CCBO – 4.5 pF – fT 100 MHz – – - IEB0 – – 100 nA - ICB0 - ICB0 – – – – 100 nA 10 µA - VBE 600 mV – 750 mV - VBEsat - VBEsat – – 720 mV 810 mV – – Kennwerte (Tj = 25°C) Typ. Max. 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2