BCW60

BCW 60 NPN General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 1.1 NPN 250 mW SOT-23 (TO-236) 0.01 g 0.4 3 Plastic case Kunststoffgehäuse 1.3 ±0.1 Type Code 1 2 2.5 max Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM Tj TS Grenzwerte (TA = 25/C) BCW 60 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 200 mA 150/C - 65…+ 150/C Kennwerte (Tj = 25/C) Min. Typ. – – – Max. 20 nA 20 :A 20 nA 350 mV 550 mV Characteristics (Tj = 25/C) Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 32 V IE = 0, VCB = 32 V, Tj = 150/C Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 4 V IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA IEB0 2 ICB0 ICB0 – – – 50 mV 100 mV Collector saturation volt. – Kollektor-Sättigungsspg. ) VCEsat VCEsat 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 38 01.11.2003 General Purpose Transistors Characteristics (Tj = 25/C) Min. Base saturation voltage – Basis-Sättigungsspannung 1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA BCW 60B VCE = 5 V, IC = 10 :A BCW 60C BCW 60D BCW 60B VCE = 5 V, IC = 2 mA BCW 60C BCW 60D BCW 60B VCE = 1 V, IC = 50 mA BCW 60C BCW 60D Base-Emitter voltage – Basis-Emitter-Spannung 1) VCE = 5 V, IC = 10 :A VCE = 5 V, IC = 2 mA VCE = 1 V, IC = 50 mA Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz VCB = 10 V, IE = ie = 0, f = 1 MHz VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 :A, RG = 2 kS, f = 1 kHz, )f = 200 Hz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking – Stempelung BCW 60B = AB F – RthA 2 dB fT CCB0 CEB0 100 MHz – – 250 MHz 1.7 pF 11 pF VBEon VBEon VBEon – 550 mV – 520 mV 650 mV 780 mV VBEsat VBEsat hFE hFE hFE hFE hFE hFE hFE hFE hFE 600 mV 700 mV 20 40 100 180 250 380 70 90 100 – – – – – – – – – – – BCW 60 Kennwerte (Tj = 25/C) Typ. Max. 850 mV 1050 mV – – – 310 460 630 – – – – 700 mV – – – – DC current gain – Kollektor-Basis-Stromverhältnis 1) Collector-Base Capacitance – Kollektor-Basis-Kapazität Emitter-Base Capacitance – Emitter-Basis-Kapazität 6 dB 420 K/W 2) BCW 61 series BCW 60C = AC BCW 60D = AD ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 39