BCW60C

BCW60A ... BCW60D BCW60A ... BCW60D NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 NPN 250 mW SOT-23 (TO-236) 0.01 g Version 2006-07-31 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCEO VCBO VEB0 Ptot IC ICM IBM Tj TS 2.5 max Grenzwerte (TA = 25°C) BCW60A ... BCW60D 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis VCE = 5 V, IC = 10 µA 2) Kennwerte (Tj = 25°C) Typ. 140 200 300 460 170 250 350 500 – – – – Max. – – – – 220 310 460 630 – – – – BCW60A BCW60B BCW60C BCW60D BCW60A BCW60B BCW60C BCW60D BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE 20 20 40 100 120 180 250 380 50 70 90 100 VCE = 5 V, IC = 2 mA VCE = 1 V, IC = 50 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 BCW60A ... BCW60D Characteristics (Tj = 25°C) Min. Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 50 mA, VCE = 1 V Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 30 V, (E open) VCE = 30 V, Tj = 125°C, (E open) Emitter-Base cutoff current VEB = 4 V, (C open) Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 10 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking - Stempelung F RthA – 2 dB < 420 K/W 1) BCW61A ... BCW61D BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD 6 dB CEBO – 11 pF – CCBO – 2 pF – fT 100 MHz 250 MHz – IEB0 – – 20 nA ICB0 ICB0 – – – – 20 nA 20 µA VBE VBE VBE – 550 mV – 520 mV 650 mV 780 mV – 750 mV – VBEsat VBEsat – – 700 mV 830 mV 850 mV 1050 mV VCEsat VCEsat – – 120 mV 200 mV 250 mV 550 mV Kennwerte (Tj = 25°C) Typ. Max. 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2