BCW61C

BCW61A ... BCW61D BCW61A ... BCW61D PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 PNP 250 mW SOT-23 (TO-236) 0.01 g Version 2006-07-31 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEB0 Ptot - IC - ICM - IBM Tj TS 2.5 max Grenzwerte (TA = 25°C) BCW60A ... BCW60D 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA 2) Kennwerte (Tj = 25°C) Typ. 140 200 300 460 170 250 350 500 – – – – Max. – – – – 220 310 460 630 – – – – BCW61A BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C BCW61D hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE 20 30 40 100 120 180 250 380 60 80 100 110 - VCE = 5 V, - IC = 2 mA - VCE = 1 V, - IC = 50 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 BCW61A ... BCW61D Characteristics (Tj = 25°C) Min. Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.25 mA - IC = 50 mA, - IB = 1.25 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.25 mA - IC = 50 mA, - IB = 1.25 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) - IC = 10 µA, - VCE = 5 V - IC = 2 mA, - VCE = 5 V - IC = 50 mA, - VCE = 1 V Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 125°C, (E open) Emitter-Base cutoff current - VEB = 4 V, (C open) Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 10 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking - Stempelung F RthA – 2 dB < 420 K/W 1) BCW60A ... BCW60D BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD 6 dB CEBO – 11 pF – CCBO – 4.5 pF – fT 100 MHz 250 MHz – - IEB0 – – 20 nA - ICB0 - ICB0 – – – – 20 nA 20 µA - VBE - VBE - VBE – 550 mV – 520 mV 650 mV 780 mV – 750 mV – - VBEsat - VBEsat – – 700 mV 830 mV 850 mV 1050 mV - VCEsat - VCEsat – – 120 mV 200 mV 250 mV 550 mV Kennwerte (Tj = 25°C) Typ. Max. 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2