BCW66F

BCW66F ... BCW66H BCW66F ... BCW66H NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 NPN 250 mW SOT-23 (TO-236) 0.01 g Version 2006-07-31 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCEO VCBO VEB0 Ptot IC ICM IBM Tj TS 2.5 max Grenzwerte (TA = 25°C) BCW66F ... BCW66H 45 V 75 V 5V 250 mW 1) 800 mA 1000 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis VCE = 10 V, IC = 100 µA 2) Kennwerte (Tj = 25°C) Typ. – – – – – – 160 250 350 35 60 100 Max. – – – – – – 250 400 630 – – – BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE 35 50 80 75 100 180 100 160 250 – – – VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 100 mA VCE = 2 V, IC = 500 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 BCW66F ... BCW66H Characteristics (Tj = 25°C) Min. Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 45 V, (E open) VCE = 45 V, Tj = 125°C, (E open) Emitter-Base cutoff current VEB = 4 V, (C open) Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 50 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking - Stempelung CEBO RthA – 60 pF < 420 K/W 1) BCW68F ... BCW68H BCW66F = EF BCW66G = EG BCW66H = EH – CCBO – 6 pF – fT – 170 MHz – IEB0 – – 20 nA ICB0 ICB0 – – – – 20 nA 20 µA VBEsat VBEsat – – – – 1.25 V 2.0 V VCEsat VCEsat – – – – 300 mV 700 mV Kennwerte (Tj = 25°C) Typ. Max. 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2