BCW68F

BCW68F ... BCW68H BCW68F ... BCW68H PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 PNP 250 mW SOT-23 (TO-236) 0.01 g Version 2006-07-31 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEB0 Ptot - IC - ICM - IBM Tj TS 2.5 max Grenzwerte (TA = 25°C) BCW68F ... BCW68H 45 V 60 V 5V 250 mW 1) 800 mA 1000 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 10 V, - IC = 100 µA 2) Kennwerte (Tj = 25°C) Typ. – – – – – – 160 250 350 – – – Max. – – – – – – 250 400 630 – – – BCW68F BCW68G BCW68H BCW68F BCW68G BCW68H BCW68F BCW68G BCW68H BCW68F BCW68G BCW68H hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE 35 50 80 75 120 180 100 160 250 35 60 100 - VCE = 1 V, - IC = 10 mA - VCE = 1 V, - IC = 100 mA - VCE = 2 V, - IC = 500 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 BCW68F ... BCW68H Characteristics (Tj = 25°C) Min. Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 100 mA, - IB = 10 mA - IC = 500 mA, - IB = 50 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 100 mA, - IB = 10 mA - IC = 500 mA, - IB = 50 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 45 V, (E open) - VCE = 45 V, Tj = 125°C, (E open) Emitter-Base cutoff current - VEB = 4 V, (C open) Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 50 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking - Stempelung CEBO RthA – 60 pF < 420 K/W 1) BCW66F ... BCW66H BCW68F = DF BCW68G = DG BCW68H = DH – CCBO – 6 pF – fT – 200 MHz – - IEB0 – – 20 nA - ICB0 - ICB0 – – – – 20 nA 20 µA - VBEsat - VBEsat – – – – 1.25 V 2.0 V - VCEsat - VCEsat – – – – 300 mV 700 mV Kennwerte (Tj = 25°C) Typ. Max. 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2