BYP35A3

BYP35A05 ... BYP35A6, BYP35K05 ... BYP35K6 BYP35A05 ... BYP35A6, BYP35K05 ... BYP35K6 Silicon-Press-Fit-Diodes – High Temperature Diodes Silizium-Einpress-Dioden – Hochtemperatur-Dioden Version 2006-04-22 Ø 12.75 Ø 11 ±0.1 Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Rändel 0.8 knurl 0.8 35 A 50 ... 600 V 28.5 min 1.3 Metal press-fit case with plastic cover Metall-Einpressgehäuse mit Plastik-Abdeckung Weight approx. Gewicht ca. Compound has classification UL94V-0 Vergussmasse nach UL94V-0 klassifiziert Standard packaging: bulk Standard Lieferform: lose im Karton 10 g Ø 13±01 Dimensions - Maße [mm] Maximum ratings Type / Typ Wire to / Draht an Anode BYP35A05 BYP35A1 BYP35A2 BYP35A3 BYP35A4 BYP35A6 Cathode BYP35K05 BYP35K1 BYP35K2 BYP35K3 BYP35K4 BYP35K6 Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 50 100 200 300 400 600 TC = 150°C f > 15 Hz TA = 25°C TA = 25°C IFAV IFRM IFSM i2t Tj TS 5 ±0.2 10.7 ±0.2 Grenzwerte Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 60 120 240 360 480 700 35 A 130 A 1) 360/400 A 660 A2s -50...+215°C -50...+215°C Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 Max. case temperature TC = 150°C – Max. Gehäusetemperatur TC = 150°C http://www.diotec.com/ © Diotec Semiconductor AG 1 BYP35A05 ... BYP35A6, BYP35K05 ... BYP35K6 Characteristics Forward Voltage – Durchlass-Spannung Leakage Current – Sperrstrom Thermal Resistance Junction – Case Wärmewiderstand Sperrschicht – Gehäuse Tj = 25°C Tj = 25°C IF = 35 A VR = VRRM VF IR RthC Kennwerte < 1.1 V < 100 µA < 0.8 K/W 120 [%] 100 10 3 [A] 10 2 Tj = 125°C 80 10 Tj = 25°C 60 40 1 20 IFAV 0 0 TC 50 100 150 200 [°C] IF 10 Rated forward current versus case temperature Zul. Richtstrom in Abh. von der Gehäusetemp. -1 360a-(35a-1,1v) 0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 10 3 [A] 102 îF 10 1 10 10 [n] 10 Peak forward surge current versus number of cycles at 50 Hz Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz 2 3 © Diotec Semiconductor AG http://www.diotec.com/ 2