BYP35A05 ... BYP35A6, BYP35K05 ... BYP35K6
BYP35A05 ... BYP35A6, BYP35K05 ... BYP35K6
Silicon-Press-Fit-Diodes – High Temperature Diodes Silizium-Einpress-Dioden – Hochtemperatur-Dioden Version 2006-04-22
Ø 12.75 Ø 11
±0.1
Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung
Rändel 0.8 knurl 0.8
35 A 50 ... 600 V
28.5 min
1.3
Metal press-fit case with plastic cover Metall-Einpressgehäuse mit Plastik-Abdeckung Weight approx. Gewicht ca. Compound has classification UL94V-0 Vergussmasse nach UL94V-0 klassifiziert Standard packaging: bulk Standard Lieferform: lose im Karton 10 g
Ø 13±01
Dimensions - Maße [mm]
Maximum ratings Type / Typ Wire to / Draht an Anode BYP35A05 BYP35A1 BYP35A2 BYP35A3 BYP35A4 BYP35A6 Cathode BYP35K05 BYP35K1 BYP35K2 BYP35K3 BYP35K4 BYP35K6 Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 50 100 200 300 400 600 TC = 150°C f > 15 Hz TA = 25°C TA = 25°C IFAV IFRM IFSM i2t Tj TS
5
±0.2
10.7
±0.2
Grenzwerte Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 60 120 240 360 480 700 35 A 130 A 1) 360/400 A 660 A2s -50...+215°C -50...+215°C
Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur
1
Max. case temperature TC = 150°C – Max. Gehäusetemperatur TC = 150°C http://www.diotec.com/
© Diotec Semiconductor AG
1
BYP35A05 ... BYP35A6, BYP35K05 ... BYP35K6 Characteristics Forward Voltage – Durchlass-Spannung Leakage Current – Sperrstrom Thermal Resistance Junction – Case Wärmewiderstand Sperrschicht – Gehäuse Tj = 25°C Tj = 25°C IF = 35 A VR = VRRM VF IR RthC Kennwerte < 1.1 V < 100 µA < 0.8 K/W
120 [%] 100
10
3
[A] 10
2
Tj = 125°C
80 10
Tj = 25°C
60
40 1 20 IFAV 0 0 TC 50 100 150 200 [°C] IF 10
Rated forward current versus case temperature Zul. Richtstrom in Abh. von der Gehäusetemp.
-1
360a-(35a-1,1v)
0.4
VF
0.8
1.0
1.2
1.4
[V] 1.8
Forward characteristics (typical values) Durchlasskennlinien (typische Werte)
10
3
[A]
102
îF
10
1
10 10 [n] 10 Peak forward surge current versus number of cycles at 50 Hz Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
2
3
© Diotec Semiconductor AG
http://www.diotec.com/
2
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