DI068N03PQ-AQ

DI068N03PQ DI068N03PQ ID25°C = 68 A RDS(on) ~ 3 mΩ Tjmax = 150°C N-Channel Power MOSFET N-Kanal Leistungs-MOSFET VDSS = 30 V PD = 25 W EAS = 80 mJ Version 2020-08-21 ±0.1 8 7 6 5 1 2 3 4 1 2 3 4 ±0.2 ±0.2 1.0 5.9 6.0 ±0.2 Type Typ ±0.2 0.25 5.0 ±0.2 ±0.2 0.55 3.4 4.0 1.27 8 7 5 D Features Low profile, space saving package Low on state resistance Fast switching times Low gate charge Avalanche rated Compliant to RoHS, REACH, Conflict Minerals 1) Typische Anwendungen Gleichstrom-Wandler Stromversorgungen Gleichstrom-Antriebe Elektrowerkzeuge Synchrongleichrichter Standardausführung Suffix -Q: AEC-Q101 konform 1) Suffix -AQ: in AEC-Q101 Qualifikation 1) RoHS Pb EE WE 8 7 6 5 0.5 6 Typical Applications DC/DC Converters Power Supplies DC Drives Power Tools Synchronous Rectifiers Commercial grade Suffix -Q: AEC-Q101 compliant 1) Suffix -AQ: in AEC-Q101 qualification 1) Mechanical Data 1) Taped and reeled 1 2 3 4 G Besonderheiten Flache, platzsparende Bauform Niedriger Einschaltwiderstand Schnelle Schaltzeiten Niedrige Gate-Ladung Avalanche-Charakteristik Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanische Daten 1) 5000 / 13“ Weight approx. S EL V QFN5x6 / ~TDSON-8 Gegurtet auf Rolle 0.1 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen Dimensions - Maße [mm] MSL = 1 Maximum ratings 2) Grenzwerte 2) DI068N03PQ/-AQ Drain-Source voltage Drain-Source-Spannung VGS = 0 V (short) Gate-Source-voltage continuos Gate-Source-Spannung dauernd VDSS 30 V VGSS ± 20 V Power dissipation Verlustleistung TC = 25°C 3) Ptot 25 W Drain current continous Drainstrom dauernd TC = 25°C 3) ID 68 A Drain current continous Drainstrom dauernd TC = 100°C 3) ID 43 A ) IDM 210 A TC = 25°C 3) IS 42 A VGS = 0 V, tp = 10 ms ISM 120 A VDD = 30 V, VG = 10 V L = 0.1 mH, RG = 25 Ω EAS 80 mJ Tj TS -55…+150°C -55…+150°C Peak Drain current – Drain-Spitzenstrom Source current continous Sourcestrom dauernd Peak Source current – Source-Spitzenstrom Single pulse avalanche energy Einzelpuls Avalanche-Energie (Fig. 1) 4 Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 3 4 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben Measured at heat flange – Gemessen an der Kühlfahne Pulse width refer to SOA diagram – Pulsbreite siehe SOA-Diagramm © Diotec Semiconductor AG http://www.diotec.com/ 1 DI068N03PQ Characteristics (static) Kennwerte (statisch) Tj = 25°C Min. Typ. Max. V(BR)DSS 30 V – – IDSS – – 1 µA IGSS – – ± 100 nA VGS(th) 1.2 V – 2.5 V RDS(on) – 3 mΩ – 4 mΩ 6 mΩ Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung ID = 250 µA VGS = 0 V (short) Drain-Source leakage current – Drain-Source Leckstrom VDS = 24 V VGS = 0 V (short) Gate-Body leakage current – Gate-Substrat Leckstrom VGS = ±20 V VDS = 0 V (short) Gate-Source threshold voltage – Gate-Source Schwellspannung VGS = VDS ID = 250 µA Drain-Source on-state resistance – Drain-Source Einschaltwiderstand VGS = 10 V VGS = 4.5 V ID = 20 A ID = 10 A Characteristics (dynamic) Kennwerte (dynamisch) Tj = 25°C Min. Typ. Max. gFS – 40 S – Ciss – 3650 pF – Coss – 430 pF – Crss – 350 pF – td(on) tr – 25 ns 35 ns – td(off) tf – 25 ns 5 ns – Qg – 79 nC – Qgs – 9.5 nC – Qgd – 20 nC – RGi – 0.6 Ω – Forward Transconductance – Übertragungssteilheit VDS = 5 V ID = 20 A Input Capacitance – Eingangskapazität VDS = 15 V VGS = 0 V f = 1 MHz Output Capacitance – Ausgangskapazität VDS = 15 V VGS = 0 V f = 1 MHz Reverse Transfer Capacitance – Rückwirkungskapazität VDS = 15 V VGS = 0 V f = 1 MHz Turn-On Delay & Rise Time – Einschaltverzögerung und Anstiegszeit VDD = 15 V ID = 10 A VGS = 10 V RG = 3.3 Ω (Fig. 1) Turn-Off Delay & Fall Time – Ausschaltverzögerung und Abfallzeit VDD = 15 V ID = 10 A VGS = 0 V RG = 3.3 Ω (Fig. 1) Total Gate Charge – Gesamte Gate-Ladung VDD = 15 V ID = 20 A VGS = 10 V Gate-Source Charge – Gate-Source-Ladung VDD = 15 V ID = 20 A VGS = 10 V Gate-Drain Charge – Gate-Drain-Ladung VDD = 15 V ID = 20 A VGS = 10 V Intrinsic Gate resistance – Innerer Gatewiderstand f = 1 Mhz D open Fig. 1 Test circuit for switching times (R) and avalanche energy (L) td(on) tr (“rise“ und “fall“ beziehen sich auf I D) 2 VDS 90% VGS (“rise“ and “fall“ refer to I D ) Testaufbau für Schaltzeiten (R) und Avalanche-Energie (L) td(off) tf VDS VGS RG R ID VDD L 10% http://www.diotec.com/ © Diotec Semiconductor AG DI068N03PQ Characteristics (diode) Kennwerte (Diode) Tj = 25°C Min. Typ. Max. VSD – 0.8 V 1.1 V trr – 17 ns – Qrr – 7.5 nC – Forward voltage – Durchlass-Spannung VGS = 0 V IS = 20 A Reverse recovery time – Sperrverzugszeit IS = 40 A, di/dt = -100 A/µs Reverse recovery charge – Sperrverzugsladung IS = 40 A, di/dt = -100 A/µs Characteristics (thermal) Kennwerte (thermisch) Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC Min. Typ. Max. – 5 K/W 1 ) – 3 10 100 D = 0.5 [A] [%] T j = 1 2 5 °C 2 10 D = 0.1 10 Z thA RthA D -> 0 T j = 2 5 °C D = t p/T D = 0.02 0 tp 10 T 1 0.01 [ms] 0.1 1 10 10 2 [t p] Relative transient thermal impedance vs. pulse duration (typical) Relativer transienter Wärmewiderstand über Impulsdauer (typisch) 1 10 3 IS VGS = 0V 10-1 Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 0.4 VSD 0.8 1.0 1.2 1.4 [V] 1.8 Source-Drain diode characteristics (typical values) Kennlinie der Source-Drain Diode (typische Werte) Measured towards heat sink area (Drain) – Gemessen zur Kühlfläche (Drain) © Diotec Semiconductor AG http://www.diotec.com/ 3