DIT095N08

DIT095N08 DIT095N08 ID25°C = 95 A RDS(on) ~ 6.6 mΩ Tjmax = 175°C N-Channel Power MOSFET N-Kanal Leistungs-MOSFET VDSS = 80 V PD = 170 W EAS = 529 mJ Version 2020-01-28 2.8±0.5 10.1±0.3 1.2±0.2 ±0.2 ±0.3 Type Typ 8.7 ±0.7 14.9 ±0.2 4.5 Ø 3.8 4 ±0.1 0.42 3.9 ±0.5 ±0.1 1.3 13.9 ±0.2 2.67 ±0.3 1 2 3 0.8±0.2 D (2/4) Typische Anwendungen Gleichstrom-Wandler Stromversorgungen Gleichstrom-Antriebe Elektrowerkzeuge Standardausführung 1) Features Advanced Trench Technology Low on state resistance Fast switching times Low gate charge Avalanche rated Compliant to RoHS, REACH, Conflict Minerals 1) RoHS Pb EE WE ±0.1 2.54 Typical Applications DC/DC Converters Power Supplies DC Drives Power Tools Commercial grade 1) Mechanical Data 1) Packed in tubes/cardboards S (3) Besonderheiten Advanced Trench Technologie Niedriger Einschaltwiderstand Schnelle Schaltzeiten Niedrige Gate-Ladung Avalanche-Charakteristik Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanische Daten 1) 50/1000 Weight approx. G (1) EL V TO-220AB Verpackt in Stangen/Kartons 2.2 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen Dimensions - Maße [mm] MSL N/A Maximum ratings 2) Grenzwerte 2) DIT095N08 Drain-Source voltage Drain-Source-Spannung VGS = 0 V (short) Gate-Source-voltage continuos Gate-Source-Spannung dauernd VDSS 80 V VGSS ± 20 V Power dissipation Verlustleistung TC = 25°C 3) Ptot 170 W Drain current continous Drainstrom dauernd TC = 25°C 3) ID 95 A Drain current continous Drainstrom dauernd TC = 100°C 3) ID 67 A ) IDM 320 A TC = 25°C 3) IS 40 A VGS = 0 V, tp = 10 s ISM 95 A VDD = 40 V, VG = 10 V L = 0.5 mH, RG = 25 Ω EAS 529 mJ Tj TS -55…+175°C -55…+175°C Peak Drain current – Drain-Spitzenstrom Source current continous Sourcestrom dauernd Peak Source current – Source-Spitzenstrom Single pulse avalanche energy Einzelpuls Avalanche-Energie (Fig. 1) 4 Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 3 4 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben Measured at heat flange – Gemessen an der Kühlfahne Pulse width refer to SOA diagram – Pulsbreite siehe SOA-Diagramm © Diotec Semiconductor AG http://www.diotec.com/ 1 DIT095N08 Characteristics (static) Kennwerte (statisch) Tj = 25°C Min. Typ. Max. V(BR)DSS 80 V – – IDSS – – 1 µA IGSS – – ± 100 nA VGS(th) 2V 2.9 V 4V RDS(on) – 6.6 mΩ 8 mΩ Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung ID = 250 µA VGS = 0 V (short) Drain-Source leakage current – Drain-Source Leckstrom VDS = VDSS VGS = 0 V (short) Gate-Body leakage current – Gate-Substrat Leckstrom VGS = ±20 V VDS = 0 V (short) Gate-Source threshold voltage – Gate-Source Schwellspannung VGS = VDS ID = 250 µA Drain-Source on-state resistance – Drain-Source Einschaltwiderstand VGS = 10 V ID = 40 A Characteristics (dynamic) Kennwerte (dynamisch) Tj = 25°C Min. Typ. Max. gFS 50 S – – Ciss – 6800 pF – Coss – 350 pF – Crss – 260 pF – td(on) tr – 18 ns 12 ns – td(off) tf – 56 ns 15 ns – Qg – 109 nC – Qgs – 35 nC – Qgd – 26 nC – RGi – tbd Ω – Forward Transconductance – Übertragungssteilheit VDS = 25 V ID = 40 A Input Capacitance – Eingangskapazität VDS = 25 V VGS = 0 V f = 1 MHz Output Capacitance – Ausgangskapazität VDS = 25 V VGS = 0 V f = 1 MHz Reverse Transfer Capacitance – Rückwirkungskapazität VDS = 25 V VGS = 0 V f = 1 MHz Turn-On Delay & Rise Time – Einschaltverzögerung und Anstiegszeit VDD = 30 V ID = 30 A VGS = 10 V RG = 2.5 Ω (Fig. 1) Turn-Off Delay Time & Fall Time – Ausschaltverzögerung und Abfallzeit VDD = 30 V ID = 30 A VGS = 0 V RG = 2.5 Ω (Fig. 1) Total Gate Charge – Gesamte Gate-Ladung VDD = 30 V ID = 30 A VGS = 10 V Gate-Source Charge – Gate-Source-Ladung VDD = 30 V ID = 30 A VGS = 10 V Gate-Drain Charge – Gate-Drain-Ladung VDD = 30 V ID = 30 A VGS = 10 V Intrinsic Gate resistance – Innerer Gatewiderstand f = 1 Mhz D open Fig. 1 Test circuit for switching times (R) and avalanche energy (L) td(on) tr (“rise“ und “fall“ beziehen sich auf I D) 2 VDS 90% VGS (“rise“ and “fall“ refer to I D ) Testaufbau für Schaltzeiten (R) und Avalanche-Energie (L) td(off) tf VDS VGS RG R ID VDD L 10% http://www.diotec.com/ © Diotec Semiconductor AG DIT095N08 Characteristics (diode) Kennwerte (Diode) Tj = 25°C Min. Typ. Max. VSD – – 1.2 V trr – – 37 ns Qrr – – 58 nC Forward voltage – Durchlass-Spannung VGS = 0 V IS = 40 A Reverse recovery time – Sperrverzugszeit IS = 40 A, di/dt = -100 A/µs Reverse recovery charge – Sperrverzugsladung IS = 40 A, di/dt = -100 A/µs Characteristics (thermal) Kennwerte (thermisch) Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC Min. Typ. Max. – 0.88 K/W 1 ) – 3 10 100 D = 0.5 [A] [%] T j = 1 2 5 °C 2 10 D = 0.1 10 Z thA RthA D -> 0 T j = 2 5 °C D = t p/T D = 0.02 0 tp 10 T 1 0.01 [ms] 0.1 1 10 10 2 [t p] Relative transient thermal impedance vs. pulse duration (typical) Relativer transienter Wärmewiderstand über Impulsdauer (typisch) 1 10 3 IS VGS = 0V 10-1 Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 0.4 VSD 0.8 1.0 1.2 1.4 [V] 1.8 Source-Drain diode characteristics (typical values) Kennlinie der Source-Drain Diode (typische Werte) Measured at heat flange – Gemessen an der Kühlfahne © Diotec Semiconductor AG http://www.diotec.com/ 3