MMBT2369A

MMBT2369 / MMBT2369A MMBT2369 / MMBT2369A NPN Version 2006-06-02 Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN 250 mW SOT-23 (TO-236) 0.01 g Type Code 1 1.9 2 2.5 max Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur E-B short B open E open C open VCES VCEO VCBO VEBO Ptot IC Tj TS Grenzwerte (TA = 25°C) MMBT2369 40 V 15 V 40 V 4.5 V 250 mW 1) 200 mA -55...+150°C -55…+150°C MMBT2369A 15 V 15 V 40 V Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis ) 2 Kennwerte (Tj = 25°C) Typ. – – – – – – – – – – – – Max. 120 – 120 – – – – 0.25 V 0.20 V 0.30 V 0.25 V 0.50 V IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 2 V IC IC IC IC IC = = = = = 10 mA, 10 mA, 10 mA, 30 mA, 100 mA, VCE = VCE = VCE = VCE = VCE = 1V 0.35 V 0.35 V, Tj = -55°C 0.4 V 1V MMBT2369 hFE hFE hFE hFE hFE hFE hFE VCEsat VCEsat VCEsat VCEsat VCEsat 40 20 – 40 20 30 20 – – – – – MMBT2369A Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) IC = 10 mA, IC IC IC IC = = = = 10 mA, 10 mA, 30 mA, 100 mA, IB = 1 mA IB = IB = IB = IB = 1 mA 1 mA, Tj = 125°C 3 mA 10 mA MMBT2369 MMBT2369A 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 MMBT2369 / MMBT2369A Characteristics (Tj = 25°C) Min. Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) IC IC IC IC = = = = 10 mA, 10 mA, 30 mA, 100 mA, IB IB IB IB = = = = 1 mA 1 mA, Tj = -55°C 3 mA 10 mA MMBT2369A VBEsat VBEsat VBEsat VBEsat ICBO ICBO MMBT2369A IC = 10 µA 2 Kennwerte (Tj = 25°C) Typ. – – – – – – – – – – – – – 5 ns 8 ns 10 ns < 420 K/W 1) MMBT2369 = 1J MMBT2369A = 1JA Max. 0.85 V 1.02 V 1.15 V 1.60 V 0.4 µA 30 µA 0.4 µA – – – – 4 pF – 13 ns 12 ns 18 ns 0.7 V – – – – – – 40 V 15 V 40 V 4.5 V – 5 – – – Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 20 V, (E open) VCB = 20 V, Tj = 125°C, (E open) Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom VCE = 20 V, (B-E short) Collector-Emitter breakdown voltage Collector-Emitter breakdown voltage ) Collector-Base breakdown voltage Emitter-Base-breakdown voltage VCB = 5 V, IE = ie = 0, f = 1 MHz Small signal current gain – Kleinsignal-Stromverstärkung VCE = 10 V, IC = 10 mA, f = 100 MHz Switching times – Schaltzeiten storage time turn-on time turn-off time IB1 = IB2 = IC = 10 mA VCC = 3 V, IC = 10 mA, IB1 = 3 mA VCC = 3 V, IC = 10 mA IB1 = 3 mA, IB2 = 1.5 mA ts ton toff RthA hfe ICES V(BR)CES V(BR)CEO V(BR)CBO V(BR)EBO CCBO IC = 10 mA IC = 10 µA IC = 10 µA Collector-Base Capacitance – Kollektor-Basis-Kapazität Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Marking - Stempelung 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2