MMBT2907_07

MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A PNP Version 2006-05-15 Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP 250 mW SOT-23 (TO-236) 0.01 g Type Code 1 1.9 2 2.5 max Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEBO Ptot - IC Tj TS Grenzwerte (TA = 25°C) MMBT2907 40 V 60 V 5V 250 mW 1) 600 mA -55...+150°C -55…+150°C MMBT2907A 60 V Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis ) 2 Kennwerte (Tj = 25°C) Typ. – – – – – – – – – – – Max. – – – – – – – – 300 0.4 V 1.6 V - IC = 0.1 mA, - VCE = 10 V - IC = 1 mA, - VCE = 10 V - IC = 10 mA, - VCE = 10 V - IC = 500 mA, - VCE = 10 V - IC = 150 mA, - VCE = 10 V - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A hFE hFE hFE hFE hFE hFE hFE hFE hFE 2 35 75 50 100 75 100 30 50 100 – – Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung ) MMBT2907 MMBT2907A - VCEsat - VCEsat 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 MMBT2907 / MMBT2907A Characteristics (Tj = 25°C) Min. Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 150 mA, - IB = 15 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 50 V, (E open) - VCB = 50 V, Tj = 125°C, (E open) Gain-Bandwidth Product – Transitfrequenz - VCE = 20 V, - IC = 50 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 2 V, IC = ic = 0, f = 1 MHz Switching times – Schaltzeiten (between 10% and 90% levels) turn on delay time rise time turn off storage time fall time - VCC = 30 V, - VBE = 1.5 V - IC = 150 mA, - IB1 = 15mA ton td tr toff ts tf RthA – – – – – – – – – – – – < 420 K/W 1) MMBT2222 / MMBT2222A MMBT2907 = 2B MMBT2907A = 2F 45 ns 10 ns 40 ns 100 ns 80 ns 30 ns CEBO – – 30 pf CCBO – – 8 pF fT 200 MHz – – MMBT2907 MMBT2907A - ICBO - ICBO - ICBO – – – – – – 20 nA 10 nA 20 µA - VBEsat - VBEsat – – – – 1.3 V 2.6 V - VCEsat - VCEsat – – – – 0.4 V 1.6 V Kennwerte (Tj = 25°C) Typ. Max. - VCC = 30 V, - IC = 150 mA, - IB1 = - IB2 = 15 mA Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking - Stempelung 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2