MMBT4401

MMBT4401 MMBT4401 NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 NPN 250 mW SOT-23 (TO-236) 0.01 g Version 2006-05-09 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCEO VCBO VEBO Ptot IC Tj TS 2.5 max Grenzwerte (TA = 25°C) MMBT4401 40 V 60 V 6V 250 mW 1) 600 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis ) 2 Kennwerte (Tj = 25°C) Typ. – – – – – – – – -4 Max. – – – 300 – 500 15 kΩ 30 µS 8*10-4 IC IC IC IC IC = = = = = 0.1 mA, 1 mA, 10 mA, 150 mA, 500 mA, VCE VCE VCE VCE VCE = = = = = 1 1 1 1 2 V V V V V hFE hFE hFE hFE hFE hfe hie hoe hre 20 40 80 100 40 40 1 kΩ 1 µS 0.1*10 h-Parameters at/bei VCE = 10 V, IC = 1 mA, f = 1 kHz Small signal current gain – Kleinsignal-Stromverstärkung Input impedance – Eingangs-Impedanz Output admittance – Ausgangs-Leitwert Reverse voltage transfer ratio – Spannungsrückwirkung – 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 MMBT4401 Characteristics (Tj = 25°C) Min. Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom VCE = 35 V, VEB = 0,4 V Emitter-Base cutoff current – Emitter-Basis-Reststrom VCE = 35 V, VEB = 0,4 V Gain-Bandwidth Product – Transitfrequenz IC = 20 mA, VCE = 10 V, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times – Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time VCC = 30 V, VEB = 2 V IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA IB1 = IB2 = 15 mA td tr ts tf RthA – – – – – – – – < 420 K/W 1) MMBT4403 MMBT4401 = 2X 15 ns 20 ns 225 ns 30 ns CEBO – – 30 pf CCBO – – 6.5 pF fT 250 MHz – – IEBV – –100 nA ICBV – – 100 nA VCEsat VCEsat VBEsat VBEsat – – 0.75 V – – – – – 0.40 V 0.75 V 0.95 V 1.2 V Kennwerte (Tj = 25°C) Typ. Max. Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking - Stempelung 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2