MMBT5401_07

MMBT5401 MMBT5401 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0. 4 3 1.3±0.1 1 .1 PNP 250 mW SOT-23 (TO-236) 0.01 g Version 2007-11-09 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1 .9 2 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEBO Ptot - IC Tj TS 2.5 max Grenzwerte (TA = 25°C) MMBT5401 150 V 160 V 5V 250 mW 1) 600 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis ) - VCE = 5 V, - IC = 1 mA - VCE = 5 V, - IC = 10 mA - VCE = 5 V, - IC = 50 mA - VCE = 5 V, - IC = 1 mA - VCE = 5 V, - IC = 10 mA - VCE = 5 V, - IC = 50 mA - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA MMBT5400 hFE hFE hFE hFE hFE hFE - VCEsat - VCEsat - VBEsat - VBEsat 30 40 40 50 60 50 – – – – 2 Kennwerte (Tj = 25°C) Typ. – – – – – – – – – – Max. – 180 – – 240 – 0.2 V 0.5 V 1.0 V 1.0 V MMBT5401 Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 MMBT5401 Characteristics (Tj = 25°C) Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 120 V, (E open) - VCB = 120 V, Tj = 100°C, (E open) - VEB = 4 V, (C open) Gain-Bandwidth Product – Transitfrequenz - IC = 10 mA, - VCE = 10 V, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA, RS = 10 Ω, f = 1 kHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking - Stempelung MMBT5401 F RthA – – < 420 K/W 1) MMBT5551 MMBT5401 = 2Lx 8 dB CCBO – – 6 pF fT 100 MHz – 300 MHz MMBT5401 MMBT5401 - ICBO - ICBO - IEBO – – – – – –50 nA 50 µA 50 nA Kennwerte (Tj = 25°C) Emitter-Base-cutoff current – Emitter-Basis-Reststrom 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [°C] 1 Power dissipation versus ambient temperature ) 1 Verlustleistung in Abh. von d. Umgebungstemp. ) 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2