MMBT5550

MMBT5550 / MMBT5551 MMBT5550 / MMBT5551 NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 NPN 250 mW SOT-23 (TO-236) 0.01 g Version 2006-05-09 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCEO VCBO VEBO Ptot IC Tj TS 2.5 max Grenzwerte (TA = 25°C) MMBT5550 140 V 160 V 6V 250 mW 1) 600 mA -55...+150°C -55…+150°C MMBT5551 160 V 180 V Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis ) 2 Kennwerte (Tj = 25°C) Typ. – – – – – – – – – – Max. – – 250 250 – – 0.15 V 0.15 V 0.25 V 0.20 V IC = 1 mA, VCE = 5 V IC = 10 mA, VCE = 5 V IC = 50 mA, VCE = 5 V MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 hFE hFE hFE hFE hFE hFE VCEsat VCEsat VCEsat VCEsat 60 80 60 80 20 30 – – – – Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 MMBT5550 / MMBT5551 Characteristics (Tj = 25°C) Min. Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 VBEsat VBEsat VBEsat VBEsat ICBO ICBO ICBO ICBO IEBO fT CCBO CEBO MMBT5550 MMBT5551 F F RthA – – – – – – – – – 100 MHz – – – – – – – – – – – – – – – – – – < 420 K/W 1) MMBT5400 / MMBT5401 MMBT5550 = 1F MMBT5551 = 3S 1.0 V 1.0 V 1.2 V 1.0 V 100 nA 50 nA 100 µA 50 µA 50 nA 300 MHz 6 pF 30 pf 10 dB 8 dB Kennwerte (Tj = 25°C) Typ. Max. Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 100 V, (E open) VCB = 120 V, (E open) VCB = 100 V, Tj = 100°C, (E open) VCB = 120 V, Tj = 100°C, (E open) VEB = 4 V, (C open) Gain-Bandwidth Product – Transitfrequenz IC = 10 mA, VCE = 10 V, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 µA, RG = 2 kΩ, f = 30 Hz ... 15 kHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking - Stempelung Emitter-Base cutoff current – Emitter-Basis-Reststrom 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2