MMBTA55

MMBTA55 ... MMBTA56 MMBTA55 ... MMBTA56 PNP Version 2006-08-09 Power dissipation – Verlustleistung 2.9 0.4 ±0.1 General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP 250 mW SOT-23 (TO-236) 0.01 g 1.1 3 Plastic case Kunststoffgehäuse 1.3 ±0.1 Type Code 1 2 2.5 max Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Base current – Basisstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEBO Ptot - IC - IB - IBM Tj TS Grenzwerte (TA = 25°C) MMBTA55 60 V 60 V 4V 250 mW 1) 500 mA 100 mA 200 mA -55...+150°C -55…+150°C MMBTA56 80 V 80 V Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis ) 2 Kennwerte (Tj = 25°C) Typ. – – – – Max. – – 0.25 V 1.2 V - IC = 10 mA, - VCE = 1 V - IC = 100 mA, - VCE = 1 V - IC = 100 mA, - IB = 10 mA Base-Emitter voltage – Basis-Emitter-Spannung - IC = 100 mA, - VCE = 1 V hFE hFE - VCEsat - VBE 100 100 – – Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 MMBTA55 ... MMBTA56 Characteristics (Tj = 25°C) Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 60 V, (E open) - VCB = 80 V, (E open) - VEB = 4 V, (C open) Gain-Bandwidth Product – Transitfrequenz - IC = 100 mA, - VCE = 1 V, f = 100 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking - Stempelung fT RthA 50 MHz – < 420 K/W 1) MMBTA05, MMBTA06 MMBTA55 = 2H MMBTA56 = 2G(M) – MMBTA55 MMBTA56 - ICBO - ICBO - IEB0 – – – – – – 100 nA 100 nA 100 nA Kennwerte (Tj = 25°C) Min. Typ. Max. Emitter-Base cutoff current – Emitter-Basis-Reststrom 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [°C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2