MMBTA92 / MMBTA93
MMBTA92 / MMBTA93 PNP
Version 2005-06-21
1.1
Surface mount High Voltage Transistors Hochspannungs-Transistoren für die Oberflächenmontage Power dissipation Verlustleistung
±0.1
PNP
250 mW SOT-23 (TO-236) 0.01 g
2.9 ±0.1 0.4
3
1.3
Type Code
1 2
2.5 max
Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
1.9
Dimensions / Maße [mm] 1=B 2=E 3=C
Maximum ratings (TA = 25°C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEBO Ptot - IC
Grenzwerte (TA = 25°C) MMBTA92 300 V 300 V 5V 250 mW 1) 500 mA -65...+150°C -65…+150°C MMBTA93 200 V 200 V
Tj TS
Characteristics (Tj = 25°C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 200 V IE = 0, - VCB = 160 V Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 3 V Collector saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 20 mA, - IB = 2 mA Base saturation voltage – Basis-Sättigungsspannung 2) - IC = 20 mA, - IB = 2 mA - VBEsat – - VCEsat – - IEB0 – MMBTA92 MMBTA93 - ICB0 - ICB0 – –
Kennwerte (Tj = 25°C) Typ. – – – – – Max. 250 nA 250 nA 100 nA 500 mV 900 mV
1 2
Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/
© Diotec Semiconductor AG
1
MMBTA92 / MMBTA93 Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 10 V, - IC = 1 mA - VCE = 10 V, - IC = 10 mA - VCE = 10 V, - IC = 30 mA Gain-Bandwidth Product – Transitfrequenz - VCE = 10 V, - IC = 20 mA, f = 100 MHz Collector-Base capacitance – Kollektor-Basis-Kapazität - VCB = 20 V, IE =ie = 0, f = 1 MHz Thermal resistance junction – ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking - Stempelung MMBTA92 MMBTA93 CCB0 CCB0 RthA – – – – < 420 K/W 1) MMBTA42, MMBTA43 MMBTA92 = 2D MMBTA93 = 2E 6 pF 8 pF fT 50 MHz – – hFE hFE hFE 25 40 25 – – – – – – Kennwerte (Tj = 25°C) Typ. Max.
120 [%] 100
80
60
40
20 Ptot 0 0 TA 50 100 150 [°C]
Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1)
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG
2
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