PCT1600J

PCT1600A ... PCT1600M PCT1600A ... PCT1600M Silicon Rectifiers – Common Cathode Silizium-Gleichrichter – Gemeinsame Kathode Version 2007-07-06 10 4 15.7 ±0.2 Nominal current Nennstrom 4 16 A 50...1000 V TO-220AB 1.8 g 3.8 Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse 123 1 3. 2 3. 4 3 1.5 0.9 2.54 123 Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Dimensions - Maße [mm] Maximum ratings and Characteristics Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 1) 50 100 200 400 600 800 1000 Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1) 50 100 200 400 600 800 1000 TC = 100°C TC = 100°C f > 15 Hz TA = 25°C TA = 25°C Grenz- und Kennwerte Forward voltage Durchlass-Spannung VF [V] 1), Tj = 25°C IF = 5 A IF = 8 A < 1.1 < 1.1 < 1.1 < 1.1 < 1.1 < 1.1 < 1.1 8 A 1) 16 A 2) 30 A 3) 135/150 A 1) 90 A2s 1) -50...+150°C -50...+175°C < 1.0 < 1.0 < 1.0 < 1.0 < 1.0 < 1.0 < 1.0 IFAV IFAV IFRM IFSM i2t PCT1600A PCT1600B PCT1600D PCT1600G PCT1600J PCT1600K PCT1600M Max. average forward current, R-load Dauergrenzstrom mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TS Tj 1 2 3 Per diode – Pro Diode Per device (parallel operation) − Pro Bauteil (Parallelbetrieb) Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C http://www.diotec.com/ © Diotec Semiconductor AG 1 PCT1600A ... PCT1600M Characteristics Leakage current Sperrstrom Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse Tj = 25°C VR = VRRM IR RthC Kennwerte < 10 µA < 2.5 K/W 1) 120 [%] 100 102 [A] 10 80 1 Tj = 125°C Tj = 25°C 60 40 10 20 IFAV 0 0 TC 50 100 150 [°C] IF 10-2 0.4 200a-(5a- 0.95v) -1 VF 0.8 1.0 1.2 1.4 [V] 1.8 Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Gehäusetemperatur Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 1 Per diode – Pro Diode http://www.diotec.com/ © Diotec Semiconductor AG 2