PN2222

PN2222 / PN2222A PN2222 / PN2222A NPN Version 2006-09-12 Power dissipation Verlustleistung CBE Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren NPN 625 mW TO-92 (10D3) 0.18 g 16 Plastic case Kunststoffgehäuse 18 Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 2 x 2.54 Dimensions - Maße [mm] Maximum ratings (TA = 25°C) 9 Grenzwerte (TA = 25°C) PN2222 (2N2222) PN2222A (2N2222A) 40 V 75 V 6V 625 mW 1) 600 mA -55...+150°C -55…+150°C Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCEO VCBO VEBO Ptot IC Tj TS 30 V 60 V 5V Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis ) IC IC IC IC = = = = 0.1 mA, 1 mA, 10 mA, 150 mA, VCE VCE VCE VCE = = = = 10 10 10 10 V V V V PN2222 PN2222A PN2222A PN2222A PN2222A PN2222A PN2222A PN2222A hFE hFE hFE hFE hFE hFE hfe hfe hie hie hoe hoe 35 50 75 100 30 40 50 75 2 Kennwerte (Tj = 25°C) Typ. – – – – – – – – – – – – Max. – – – 300 – – 300 375 8 kΩ 1.25 kΩ 35 µS 200 µS IC = 500 mA, VCE = 10 V h-Parameters at/bei VCE = 10 V, f = 1 kHz, IC = 1 mA / 10 mA Small signal current gain Kleinsignal-Stromverstärkung Input impedance – Eingangs-Impedanz Output admittance – Ausgangs-Leitwert 2 kΩ 0.25 kΩ 5 µS 25 µS 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 PN2222 / PN2222A Characteristics (Tj = 25°C) Min. Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA PN2222 PN2222A PN2222 PN2222A PN2222 PN2222A PN2222 PN2222A PN2222 PN2222A PN2222 PN2222A PN2222A VCEsat VCEsat VCEsat VCEsat VBEsat VBEsat VBEsat VBEsat ICBO ICBO ICBO ICBO IEB0 fT CCBO CEBO PN2222A F td tr ts tf RthA – – – – – 0.65 V – – – – – – – 250 MHz – – – – – – – – – – – – – – – – – – – –– – – – – – – – < 200 K/W 1) PN2709 / PN2709A 0.4 V 0.3 V 1.6 V 1.0 V 1.3 V 1.2 V 2.6 V 2.0 V 10 nA 10 nA 10 µA 10 µA 100 nA – 8 pF 30 pf 4 dB 10 ns 25 ns 225 ns 60 ns Kennwerte (Tj = 25°C) Typ. Max. Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 50 V, (E open) VCB = 60 V, (E open) VCB = 50 V, Tj = 125°C, (E open) VCB = 60 V, Tj = 125°C, (E open) VEB = 3 V, (C open) Gain-Bandwidth Product – Transitfrequenz VCE = 20 V, IC = 20 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 10 V, IC = 100 µA, RG = 1 kΩ, f = 1 kHz delay time rise time storage time fall time Switching times – Schaltzeiten (between 10% and 90% levels) VCC = 3 V, VBE = 0.5 V IC = 150 mA, IB1 = 15mA VCC = 3 V, IC = 150 mA, IB1 = IB2 = 15 mA Emitter-Base cutoff current – Emitter-Basis-Reststrom Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren 2 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG 2