S15MYD2

S15AYD2 ... S15MYD2 S15AYD2 ... S15MYD2 Surface Mount Silicon Rectifier Diodes – Single Diode Silizium-Gleichrichterdioden für die Oberflächenmontage– Einzeldiode Version 2011-05-25 1.2 4.5 ± 0.2 10.25 ± 0.5 4 Type Typ Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen 15 A 50...1000 V TO-263AB D2PAK 1.6 g 1 2 3 1.3 0.8 0.4 5.08 1 2/4 3 Dimensions - Maße [mm] Maximum ratings and Characteristics Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 1) 50 100 200 400 600 800 1000 Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1) 50 100 200 400 600 800 1000 TC = 100°C f > 15 Hz TA = 25°C TA = 25°C Grenz- und Kennwerte Forward voltage Durchlass-Spannung VF [V] Tj = 25°C IF = 5 A IF = 15 A < 1.3 < 1.3 < 1.3 < 1.3 < 1.3 < 1.3 < 1.3 15 A 80 A 1) 400/450 A 1) 800 A2s 1) -50...+150°C -50...+175°C < 1.0 < 1.0 < 1.0 < 1.0 < 1.0 < 1.0 < 1.0 IFAV IFRM IFSM i2t S15AYD2 S15BYD2 S15DYD2 S15GYD2 S15JYD2 S15KYD2 S15MYD2 Max. average forward current, R-load Dauergrenzstrom mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TS Tj 1 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C http://www.diotec.com/ © Diotec Semiconductor AG 1 S15AYD2 ... S15MYD2 Characteristics Leakage current Sperrstrom Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse Tj = 25°C VR = VRRM Tj = 125°C VR = VRRM IR IR RthC Kennwerte < 10 µA < 100 µA < 2.1 K/W 120 [%] 100 10 [A] 2 10 80 1 Tj = 125°C Tj = 25°C 60 40 10-1 20 IFAV 0 0 TC 50 100 150 [°C] IF 10 -2 200a-(5a-0.95v) 0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8 Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Gehäusetemperatur Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 2 http://www.diotec.com/ © Diotec Semiconductor AG