SBQ1045

SBQ1020 ... SBQ1045 SBQ1020 ... SBQ1045 Schottky Barrier Rectifier Diodes – Single Diode Schottky-Barrier-Gleichrichterdioden – Einzeldiode Version 2011-10-18 2.3 0.5 7.2±0.4 6.4 5.3±0.2 ±0.2 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse 10 A 20...45 V ~ TO-251 I-PAK 1.8 g 4 6.1±0.2 Type Typ 1 0.8±0.1 2 3 2.3 ± 0. 2 8.3±0.4 0.75 2 x 2.28 ±0.15 123 4 Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Dimensions - Maße [mm] Maximum ratings and Characteristics Type Typ Repetitive / Surge peak reverse voltage Periodische- / Spitzen-Sperrspannung VRRM [V] / VRSM [V] 20 30 40 45 Forward voltage Durchlass-Spannung VF [V] Tj = 125°C IF = 5 A SBQ1020 SBQ1030 SBQ1040 SBQ1045 typ. 0.36 typ. 0.36 typ. 0.36 typ. 0.36 Grenz- und Kennwerte Forward voltage Durchlass-Spannung VF [V] Tj = 25°C IF = 5 A < 0.51 < 0.51 < 0.51 < 0.51 IF = 10 A < 0.55 < 0.55 < 0.55 < 0.55 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TC = 100°C f > 15 Hz TA = 25°C TA = 25°C IFAV IFRM IFSM i2t Tj TS 10 A 30 A 1) 135/150 A 80 A2s -50...+150°C -50...+150°C 1 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C http://www.diotec.com/ © Diotec Semiconductor AG 1 SBQ1020 ... SBQ1045 Characteristics Leakage current Sperrstrom Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse Tj = 25°C Tj = 125°C VR = VRRM VR = VRRM IR IR RthC Kennwerte < 300 µA typ. 7 mA < 2.5 K/W 120 [%] 100 102 [A] Tj = 125°C 10 80 1 Tj = 25°C 60 40 10-1 20 IFAV 0 0 TC 50 100 150 [°C] IF 10-2 0 Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Gehäusetemperatur 0.4 0.6 1.0 VF [V] Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 103 [mA] 102 Tj = 125°C Tj = 150°C 10 Tj = 75°C 1 IR 10-1 0 Tj = 25°C VRRM 40 60 80 100 [%] Typ. instantaneous leakage current vs. rev. voltage Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung 2 http://www.diotec.com/ © Diotec Semiconductor AG