UFT800D

UFT800A ... UFT800J UFT800A ... UFT800J Superfast Efficient Rectifiers – Single Diode Superschnelle Hocheffizienz-Gleichrichter – Einzeldiode Version 2011-10-17 10.1±0.3 Ø 3.8±0.2 4 Type Typ Nominal current Nennstrom 2.8±0.3 4 8A 50...600 V TO-220AC 1.8 g 1.2±0.2 14.9±0.4 Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse 3.9±0.3 1 13.9±0.3 2.67±0.2 0.42±0.4 3 8.7±0.3 4.5±0.2 1.3 ±0.1 ±0.2 1 3 Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen 0.8 5.08±0.1 Dimensions - Maße [mm] Maximum ratings and Characteristics Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 50 100 150 200 300 400 500 600 Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 50 100 150 200 300 400 500 600 TC = 100°C f > 15 Hz TA = 25°C TA = 25°C Grenz- und Kennwerte Forward voltage Durchlass-Spannung VF [V] 1) IF = 5 A IF = 8 A < 1.0 < 1.0 < 1.0 < 1.0 < 1.25 < 1.25 < 1.75 < 1.75 8A 22 A 2) 112/125 A 62 A2s -50...+150°C -50...+175°C < 0.9 < 0.9 < 0.9 < 0.9 < 1.15 < 1.15 < 1.6 < 1.6 IFAV IFRM IFSM i2t UFT800A UFT800B UFT800C UFT800D UFT800F UFT800G UFT800H UFT800J Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TS Tj 1 2 Tj = 25°C Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C http://www.diotec.com/ © Diotec Semiconductor AG 1 UFT800A ... UFT800J Characteristics Type Typ Tj = 25°C UFT800A ... UFT800D UFT800F ... UFT800J Leakage current Sperrstrom Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse Reverse recovery time Sperrverzugszeit trr [ns] 1) < 25 < 35 Tj = 25°C VR = VRRM IR RthC Kennwerte Reverse recovery time Sperrverzugszeit trr [ns] 2) < 35 < 45 < 10 µA < 2.5 K/W 120 [%] 100 10 [A] 2 10 80 1 Tj = 125°C Tj = 25°C 60 40 10-1 20 IFAV 0 0 TC 50 100 150 [°C] IF 10 -2 200a-(5a-0.95v) 0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8 Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Gehäusetemperatur Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 1 2 IF = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A IF = 1.0 A, di/dt = -50 A/µs, VR = 30 V http://www.diotec.com/ © Diotec Semiconductor AG 2