1N4003

1N4003

  • 厂商:

    DIOTECH

  • 封装:

  • 描述:

    1N4003 - GENERAL PURPOSE SILICON RECTIFIER - Diotech Company.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N4003 数据手册
1N4001 THRU 1N4007 Reverse Voltage - 50 to 1000 Volts GENERAL PURPOSE SILICON RECTIFIER Forward Current - 1.0 Ampere FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Construction utilizes void-free molded plastic technique ● Low reverse leakage ● High forward surge current capability ● High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension ● DO-41 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160(4.1) MECHANICAL DATA Case: JEDEC DO-41 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.012 ounce, 0.33 grams 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Characteristic Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction and storage temperature range SYMBOLS 1N 4001 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 UNITS V V V A A V µA VRRM VRMS VDC I(AV) IFSM VF IR CJ R JA TJ,TSTG 50 35 50 100 70 100 200 140 200 400 280 400 1.0 30.0 1.1 5.0 50.0 600 420 600 800 560 800 1000 700 1000 15.0 50.0 -65 to +150 pF C/W C Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted 1N4001 THRU 1N4007 RATINGS AND CHARACTERISTIC CURVES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES FIG. 1- FORWARD CURRENT DERATING CURVE PEAK FORWARD SURGE CURRENT, AMPERES 1.0 FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 0.8 25 0.6 20 0.4 Single Phase Half Wave 60Hz Resistive or inductive Load 15 0.2 10 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0 0 25 50 75 100 125 150 175 5.0 1 10 100 AMBIENT TEMPERATURE, C NUMBER OF CYCLES AT 60 Hz FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 FIG. 4-TYPICAL REVERSE CHARACTERISTICS 1,000 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES 10 100 TJ=150 C 1 10 TJ=100 C 1 0.1 TJ=25 C PULSE WIDTH=300 ms 1%DUTY CYCLE 0.01 0.1 TJ=25 C 0.01 0.6 0.8 1.0 1.2 1.4 1.5 INSTANTANEOUS FORWARD VOLEAGE, VOLTS 0 20 40 60 80 100 PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 5-TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE, C/W 200 100 TJ=25 C 100 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE JUNCTION CAPACITANCE, pF 10 10 1 0.1 1 0.01 0.1 1 10 100 0.1 1.0 10 100 REVERSE VOLTAGE,VOLTS t,PULSE DURATION,sec.
1N4003
### 物料型号 - 型号:1N4001至1N4007

### 器件简介 - 1N4001至1N4007是一系列通用硅整流器,反向电压范围从50至1000伏特,正向电流为1.0安培。

### 引脚分配 - 引脚:采用轴向镀锡引线,可按照MIL-STD-750标准,方法2026进行焊接。 - 极性:通过色环标识阴极端。

### 参数特性 - 封装:JEDEC DO-41塑料封装体。 - 阻燃等级:Underwriters Laboratory 94V-0。 - 特点包括无空洞的模塑塑料技术、低反向漏电流、高正向浪涌电流能力。 - 保证在250°C下持续10秒、0.375英寸(9.5mm)引线长度、5磅(2.3kg)张力的高温焊接。

### 功能详解 - 这些整流器适用于单相半波60Hz的电阻性或感性负载,对于电容性负载需减少20%的电流。 - 提供了详细的电气特性表格,包括最大重复峰值反向电压、最大RMS电压、最大直流阻断电压、最大平均正向整流电流、峰值正向浪涌电流、最大瞬时正向电压、最大直流反向电流和典型结电容等参数。

### 应用信息 - 这些整流器广泛应用于需要整流功能的电路中,如电源、电机控制和信号处理等。

### 封装信息 - 封装类型:JEDEC DO-41塑料封装体。 - 尺寸:以英寸和毫米为单位提供,具体数值需参考机械数据图表。
1N4003 价格&库存

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