1N4148

1N4148 / 1N4448 SMALL SIGNAL SWITCHING DIODE FEATURES Silicon epitaxial planar diode Switching diodes ● 500mw power dissipation ● High temperature soldering guaranteed 250℃/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension ● ● 0.079(2.0) MAX DO-34(GLASS) DO-35(GLASS) 1.0 2(26.0) MIN. 0.079(2.0) MAX 1.0 2(26.0) MIN. MECHANICAL DATA Case: DO-34\DO-35 glass sealed envelope. Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.003 ounce, 0.09 grams(DO-34) 0.005 ounce, 0.14 grams(DO-35) 0.106 (2.9) MAX 0.165 (4.2) MAX 1.0 2(26.0) MIN. 0.017(0.42) TYP 0.020(0.52) TYP 1.0 2(26.0) MIN. Dimensions in inches and (millimeters) Maximum Ratings ( Characteristic Non-Repetitive Peak Voltage T =25 C Unless otherwise noted) A Symbol VRM VPWM VRWM VR IO IFSM Pd RθJA TJ,TSTG 1N4148 / 1N4448 100 75 150 2.0 500 300 -65 to +175 Unit V V mA A mW K/W C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Output Current (1) Non-Repetitive Peak Forward Surge Current @t=1.0us Power Dissipation Thermal Resistance Junction to Ambient Operating and Strorage Temperature Range Electrical Characteristics Characteristic Reverse Breakdown Voltage IR = 100ua Forward Voltage IF=10 mA 1N4148 1N4448 IF=5 mA IF=100 mA Leakage Current VR =20V VR =75V VR =75V, Tj=150 C Junction Capacitance Reverse Recovery Time IF=10 mA, IR=1mA, VR =6V, RL=100Ω ( TA=25 C Unless otherwise noted) Symbol V(BR)R Min 100 Max - Unit V VF 0.62 1.0 0.72 1.0 25 5 50 4 4 V IR Cj TRR - µA PF nS Note: 1.Valid Provided that device Terminals are Kept at Ambient Temperature. 1N4148 / 1N4448 RATINGS AND CHARACTERISTIC CURVES FIG. 1-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE 700 600 500 400 300 200 100 0 0 100 200℃ FIG. 2-REVERSE CURRENT VERSUS CONTINUOUS REVERSE VOLTAGE (TYPICAL VALUES) INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 1 P,POWER DISSIPATION,MILLIWATTS 800 0.1 0.01 0.001 TJ=25 C AMBIENT TEMPERATURE,℃ 0.0001 40 60 80 100 120 PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 3-FORWARD CHARACTERISTICS 16 INSTANTANEOUS FORWARD CURRENT,MILLIAMPERES 12 10 8 6 4 2 0 0 1 2V Ctot(vR) RELATIVE CAPACTANCE Ctot(0v) 14 FIG. 4-RELATIVE CAPACTANCE VERSUS REVERSE VOLTAGE 1.2 1.0 0.8 0.6 INSTANTANEOUS FORWARD VOLEAGE, VOLTS 0.4 0 5 10V REVERSE VOLTAGE,VOLTS. FIG. 5-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION 100 n=tp/T V=tp/T T=1/fp 10 tp IFRM,PEAK FORWARD CURRENT,AMPERES n=0 0.1 IFRM T 1 0.2 0.5 0.1 0.01 0.1 1 10 100 1000ms tp,PULSE DURATION,ms