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1N5399

1N5399

  • 厂商:

    DIOTECH

  • 封装:

  • 描述:

    1N5399 - GENERAL PURPOSE SILICON RECTIFIER - Diotech Company.

  • 数据手册
  • 价格&库存
1N5399 数据手册
1N5391 THRU 1N5399 Reverse Voltage - 50 to 1000 Volts GENERAL PURPOSE SILICON RECTIFIER Forward Current - 1.5 Ampere FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Construction utilizes void-free molded plastic technique ● Low reverse leakage ● High forward surge current capability ● High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension ● DO-15 1.0 (25.4) MIN. 0.140 (3.6) 0.104(2.6) DIA. 0.300(7.6) 0.230(5.8) MECHANICAL DATA Case: JEDEC DO-15 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.014 ounce, 0.40 grams 1.0 (25.4) MIN. 0.034 (0.90) 0.028 (0.70) DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Characteristic Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.5A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction and storage temperature range SYMBOLS 1N 1N 1N 1N 1N 1N 1N 1N UNITS 1N 5391 5392 5393 5394 5395 5396 5397 5398 5399 VRRM VRMS VDC I(AV) IFSM VF IR CJ R JA 50 35 50 100 200 300 400 500 70 140 210 280 350 100 200 300 400 500 1.5 50.0 1.1 5.0 50.0 20.0 50.0 -65 to +150 600 800 1000 420 560 700 600 800 1000 V V V A A V µA TJ,TSTG pF C/W C Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted 1N5391 THRU 1N5399 RATINGS AND CHARACTERISTIC CURVES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES FIG. 1- FORWARD CURRENT DERATING CURVE PEAK FORWARD SURGE CURRENT, AMPERES 1.5 FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 50 1.2 40 0.9 30 0.6 Single Phase Half Wave 60Hz Resistive or inductive Load 20 0.3 10 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0 0 25 50 75 100 125 150 175 0 1 10 100 AMBIENT TEMPERATURE, C NUMBER OF CYCLES AT 60 Hz FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 FIG. 4-TYPICAL REVERSE CHARACTERISTICS 1,000 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES 10 100 TJ=150 C 1 10 TJ=100 C 1 0.1 TJ=25 C PULSE WIDTH=300 ms 1%DUTY CYCLE 0.01 0.1 TJ=25 C 0.01 0.6 0.8 1.0 1.2 1.4 1.5 INSTANTANEOUS FORWARD VOLEAGE, VOLTS 0 20 40 60 80 100 PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 5-TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE, C/W 200 100 TJ=25 C 100 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE JUNCTION CAPACITANCE, pF 10 10 1 0.1 1 0.01 0.1 1 10 100 0.1 1.0 10 100 REVERSE VOLTAGE,VOLTS t,PULSE DURATION,sec.
1N5399 价格&库存

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1N5399G
  •  国内价格
  • 1+0.13721
  • 30+0.13231
  • 100+0.12741
  • 500+0.11761
  • 1000+0.11271
  • 2000+0.10977

库存:165

1N5399-E3/54
    •  国内价格
    • 1+0.36481
    • 10+0.3363
    • 30+0.3306
    • 100+0.3135

    库存:7