1SS400

1SS400 SURFACE MOUNT FAST SWITCHING DIODE Features Extremely fast reverse recovery time to reduce switching losses Very low capacitance for reduced insertion losses Reverse voltage rating of 80V Also available in lead-free plating (100% matte tin finish) SOD-523 Dim A B C D H J K Min 1.10 0.70 0.50 0.25 0.16 0.11 1.50 Max 1.30 0.90 0.70 0.35 0.24 0.13 1.70 APPLICATION Mobile phones and accessories Hand-held computers High Speed Switching Applications PIN 1. CA THODE 2. A NODE Maximum Ratings Parameter @TA=25°C unless otherwise specified Symbol VRM VR IF IFSM Ptot Tj Tstg @TA=25°C unless otherwise specified Limits 90 80 225 0.5 200 150 -55-150 Unit V V mA A mW ℃ ℃ Peak reverse voltage DC Reverse voltage Continuous forward current Surge current Total power dissipation Junction temperature Storage temperature Electrical Characteristics Parameter Forward voltage Reverse current Diode capacitance Reverse recovery time Symbol VF IR Cd trr Min. Typ. Max. 1.2 0.1 Unit V μA pF ns Conditions IF=100mA VR=80V VR=0.5V,f=1MHz VR=6V,IF=10mA,RL=100Ω 0.72 2.0 4 RATINGS AND CHARACTERISTIC CURVES 820 Ω 1SS400 +10 V 2 .0 k Ω 100 µH 0 .1 µ F IF 0 .1 µ F DUT ? 5 0 Ω O u tp u t P u ls e G e n e ra to r 5 0 Ω In p u t S a m p li n g O s c il lo s c o p e Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (IF) to 10mA 2. Input pulse is adjusted to IR(peak) is equal to 10mA F igure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT 100 R ev erse L eak ag e Cu r ren t , I R (u A ) 10.000 TJ = 150 °C F o r w ar d Cu r r en t , IF (m A ) TJ = 150 °C 1.000 10 TJ = 25 °C TJ = 75 °C 1 TJ = -25 °C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage, V F (V) 0.100 TJ = 75 °C 0.010 TJ = 25 °C 0.001 0 20 40 Reverse Voltage, V R (V) 60 80 Fig. 2. Typical Forward Characteristics Fig. 3. Typical Reverse Characteristics 0.8 0.6 Capaci tan ce (pF) 0.4 0.2 0.0 0 10 20 30 40 50 60 Reverse Voltage, V R (V) Fig. 4. Typical Capacitance